| No. |
Part Name |
Description |
Manufacturer |
| 2701 |
QTM1001A |
7-20.0V; 25mA; charge-transfer sensor module |
Quantum Research Group ltd |
| 2702 |
RB088BM100 |
Schottky Barrier Diode |
ROHM |
| 2703 |
RB088BM100FH |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 2704 |
RB088BM100FHTL |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 2705 |
RB088BM100TL |
Schottky Barrier Diode |
ROHM |
| 2706 |
RB098BM100 |
Schottky Barrier Diode |
ROHM |
| 2707 |
RB098BM100FH |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 2708 |
RB098BM100FHTL |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 2709 |
RB098BM100TL |
Schottky Barrier Diode |
ROHM |
| 2710 |
RB168MM100 |
Schottky Barrier Diode |
ROHM |
| 2711 |
RB168MM100TF |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 2712 |
RB168MM100TFTR |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 2713 |
RB168MM100TR |
Schottky Barrier Diode |
ROHM |
| 2714 |
RB168VAM100 |
Schottky Barrier Diode |
ROHM |
| 2715 |
RB168VAM100TR |
Schottky Barrier Diode |
ROHM |
| 2716 |
RB168VYM100FH |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 2717 |
RB168VYM100FHTR |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 2718 |
RB578VAM100 |
Schottky Barrier Diode |
ROHM |
| 2719 |
RB578VAM100TR |
Schottky Barrier Diode |
ROHM |
| 2720 |
RB578VYM100FH |
Schottky Barrier Diodes (corresponds to AEC-Q101) |
ROHM |
| 2721 |
RB578VYM100FHTR |
Schottky Barrier Diodes (corresponds to AEC-Q101) |
ROHM |
| 2722 |
RFM10N12 |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 2723 |
RFM10N15 |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 2724 |
RFM10N15L |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 2725 |
RFM10N45 |
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 2726 |
RFM10N50 |
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 2727 |
RM10 |
SILICON RECTIFIER DIODES |
EIC discrete Semiconductors |
| 2728 |
RM100 |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 2729 |
RM100314VYA |
Low Power Quint Differential Line Receiver |
National Semiconductor |
| 2730 |
RM100C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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