| No. |
Part Name |
Description |
Manufacturer |
| 271 |
DMC16202NYJ-LY-D |
16character x 2lines; 5x8dots (1character); 0.3-7.0V 1.6mA LCD module |
Optrex Corporation |
| 272 |
DRV8802-Q1 |
Automotive 1.6A Dual Brushed DC Motor Driver with Inrush Protection (PH/EN Ctrl) 28-HTSSOP -40 to 125 |
Texas Instruments |
| 273 |
DRV8802QPWPRQ1 |
Automotive 1.6A Dual Brushed DC Motor Driver with Inrush Protection (PH/EN Ctrl) 28-HTSSOP -40 to 125 |
Texas Instruments |
| 274 |
DRV8824-Q1 |
Automotive 1.6A Bipolar Stepper Motor Driver with On-Chip 1/32 Microstepping Indexer (Step/Dir Ctrl) 28-HTSSOP -40 to 125 |
Texas Instruments |
| 275 |
DRV8824QPWPRQ1 |
Automotive 1.6A Bipolar Stepper Motor Driver with On-Chip 1/32 Microstepping Indexer (Step/Dir Ctrl) 28-HTSSOP -40 to 125 |
Texas Instruments |
| 276 |
DS92UT16 |
UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers |
National Semiconductor |
| 277 |
DS92UT16TF |
UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers |
National Semiconductor |
| 278 |
DS92UT16TUF |
Utopia-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers |
National Semiconductor |
| 279 |
EM513 |
Diode Switching 1.6KV 1A 2-Pin DO-41 Ammo |
New Jersey Semiconductor |
| 280 |
EVAL-ADG901EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, Absorptive/Reflective Switches |
Analog Devices |
| 281 |
EVAL-ADG902EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, Absorptive/Reflective Switches |
Analog Devices |
| 282 |
EVAL-ADG904EB |
Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T |
Analog Devices |
| 283 |
EVAL-ADG904REB |
Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T |
Analog Devices |
| 284 |
EVAL-ADG918EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches |
Analog Devices |
| 285 |
EVAL-ADG919EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches |
Analog Devices |
| 286 |
EVAL-ADG936EB |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT |
Analog Devices |
| 287 |
EVAL-ADG936REB |
Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT |
Analog Devices |
| 288 |
EVPBB |
Tactile Switches (Light Touch Switches) - 2.6mm x 1.6mm SMD |
Panasonic |
| 289 |
FAN5331 |
Adjustable, 1.6MHz Boost Regulator with 25V Integrated FET Switch |
Fairchild Semiconductor |
| 290 |
FAN5331SX |
Adjustable, 1.6MHz Boost Regulator with 25V Integrated FET Switch |
Fairchild Semiconductor |
| 291 |
FDB016N04AL7 |
N-Channel Power Trench MOSFET 40V, 306A, 1.6mOhms |
Fairchild Semiconductor |
| 292 |
FDB8132_F085 |
N-Channel PowerTrench MOSFET 30V, 80A, 1.6mOhms |
Fairchild Semiconductor |
| 293 |
FDN5632N_F085 |
N-Channel Logic Level PowerTrench� MOSFET 60V, 1.6A, 98m? |
Fairchild Semiconductor |
| 294 |
FSS9230D |
4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 295 |
FSS9230D1 |
4A/ -200V/ 1.60 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 296 |
FSS9230D3 |
4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 297 |
FSS9230R |
4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 298 |
FSS9230R1 |
4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 299 |
FSS9230R3 |
4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 300 |
FSS9230R4 |
4A/ -200V/ 1.60 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
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