| No. |
Part Name |
Description |
Manufacturer |
| 271 |
SLR343 |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 272 |
SLR343BBT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 273 |
SLR343BCT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 274 |
SLR343BDT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 275 |
SLR343EBT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 276 |
SLR343EDT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 277 |
SMBJ5951A |
1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 278 |
SMBJ5951B |
1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 279 |
SMBJ5951C |
1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 280 |
SMBJ5951D |
1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 281 |
SPB80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL |
Infineon |
| 282 |
SPI80N03S2L-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 3.1mOhm, 80A, LL |
Infineon |
| 283 |
SPP80N03S2L-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm |
Infineon |
| 284 |
SPP80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm |
Infineon |
| 285 |
ST23YR18CD21REV3 |
Dual interface / Calypso revision 3.1 with 4,8 or 18KB EEPROM |
ST Microelectronics |
| 286 |
STB120N4LF6 |
N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 287 |
STD120N4LF6 |
N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 288 |
TC51-N3102ECBTR |
1uA voltage detector with output delay, 3.1V |
Microchip |
| 289 |
TC54VC3101ECBTR |
Voltage detector, CMOS output, 3.1V, +/-1% |
Microchip |
| 290 |
TC54VC3101ECTTR |
Voltage detector, CMOS output, 3.1V, +/-1% |
Microchip |
| 291 |
TC54VC3101EMBTR |
Voltage detector, CMOS output, 3.1V, +/-1% |
Microchip |
| 292 |
TC54VN3101ECBTR |
Voltage detector, Nch output, 3.1V, +/-1% |
Microchip |
| 293 |
TC54VN3101ECTTR |
Voltage detector, Nch open drain, 3.1V, +/-1% |
Microchip |
| 294 |
TC54VN3101EMBTR |
Voltage detector, Nch open drain, 3.1V, +/-1% |
Microchip |
| 295 |
TC55RP3101ECB |
Low dropout positive voltage rgulator. Output voltage 3.1V. Tolerance +-1%. |
TelCom Semiconductor |
| 296 |
TC55RP3101EMB |
Low dropout positive voltage rgulator. Output voltage 3.1V. Tolerance +-1%. |
TelCom Semiconductor |
| 297 |
TC55RP3101EZB |
Low dropout positive voltage regulator. Output voltage 3.1V. Tolerance +-1%. |
TelCom Semiconductor |
| 298 |
TC55RP3102ECB |
Low dropout positive voltage rgulator. Output voltage 3.1V . Tolerance +-2%. |
TelCom Semiconductor |
| 299 |
TC55RP3102EMB |
Low dropout positive voltage rgulator. Output voltage 3.1V. Tolerance +-2%. |
TelCom Semiconductor |
| 300 |
TC55RP3102EZB |
Low dropout positive voltage regulator. Output voltage 3.1V. Tolerance +-2%. |
TelCom Semiconductor |
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