| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N3904 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 40 - hFE |
Continental Device India Limited |
| 272 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 273 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 274 |
2N4234 |
6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 275 |
2N4235 |
6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 276 |
2N4236 |
6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 277 |
2N4401 |
0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 278 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 279 |
2N4898 |
Medium-power PNP silicon power transistor. 4 A, 40 V, 25 W. |
Motorola |
| 280 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 281 |
2N5344 |
High voltage power PNP silicon transistor. 1 A, 250 V, 40 W. |
Motorola |
| 282 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
| 283 |
2N6200 |
B40-28 40 WATTS - 28 VOLTS 100-200 MHZ |
Acrian |
| 284 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 285 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 286 |
2N6705 |
0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 287 |
2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 288 |
2N6708 |
0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 289 |
2N6709 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 290 |
2N6710 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 291 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
| 292 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 293 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 294 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 295 |
3D3215M-40 |
Delay 40 +/-4 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
| 296 |
3D3215Z-40 |
Delay 40 +/-4 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
| 297 |
3D7010-400 |
Delay 40 +/-4 ns, monolithic 10-TAP fixed delay line |
Data Delay Devices Inc |
| 298 |
3D7010G-400 |
Delay 40 +/-4 ns, monolithic 10-TAP fixed delay line |
Data Delay Devices Inc |
| 299 |
3D7010S-400 |
Delay 40 +/-4 ns, monolithic 10-TAP fixed delay line |
Data Delay Devices Inc |
| 300 |
3D7303-40 |
Delay 40 +/-1 ns, monolithic triple fixed delay line |
Data Delay Devices Inc |
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