No. |
Part Name |
Description |
Manufacturer |
271 |
IRF441 |
7A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs |
Intersil |
272 |
IRF441 |
Trans MOSFET N-CH 450V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
273 |
IRF441 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 8A |
Siliconix |
274 |
IRF442 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
275 |
IRF442 |
7A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs |
Intersil |
276 |
IRF443 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
277 |
IRF443 |
7A and 8A, 450V and 500V, 0.85 and 1.1 Ohm, N-Channel Power MOSFETs |
Intersil |
278 |
IRF443 |
Trans MOSFET N-CH 450V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
279 |
IRF443 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 7A |
Siliconix |
280 |
IRF451 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
281 |
IRF451 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
282 |
IRF451 |
Trans MOSFET 450V 13A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
283 |
IRF451 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 13A |
Siliconix |
284 |
IRF452 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
285 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
286 |
IRF453 |
11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs |
Intersil |
287 |
IRF453 |
Trans MOSFET 450V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
288 |
IRF453 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A |
Siliconix |
289 |
IRF821 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
290 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
291 |
IRF821 |
N-channel MOSFET, 450V, 2.5A |
SGS Thomson Microelectronics |
292 |
IRF821 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.5A |
Siliconix |
293 |
IRF821FI |
N-channel MOSFET, 450V, 2.0A |
SGS Thomson Microelectronics |
294 |
IRF822 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
295 |
IRF823 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
296 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
297 |
IRF823 |
N-channel MOSFET, 450V, 2.2A |
SGS Thomson Microelectronics |
298 |
IRF823 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A |
Siliconix |
299 |
IRF823FI |
N-channel MOSFET, 450V, 1.5A |
SGS Thomson Microelectronics |
300 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
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