| No. |
Part Name |
Description |
Manufacturer |
| 271 |
1N5381B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 272 |
1N5382B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 273 |
1N5383B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 274 |
1N5384B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 275 |
1N5385B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 276 |
1N5386 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 277 |
1N5386B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 278 |
1N5387B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 279 |
1N5388B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 280 |
1N5415 |
50 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 281 |
1N5416 |
100 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 282 |
1N5417 |
200 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 283 |
1N5418 |
400 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 284 |
1N5419 |
500 V rectifier 5.0 A forward current, 250 ns recovery time |
Voltage Multipliers |
| 285 |
1N5420 |
600 V rectifier 5.0 A forward current, 400 ns recovery time |
Voltage Multipliers |
| 286 |
1N5523A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 287 |
1N5523B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 288 |
1N5523C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 289 |
1N5550 |
200 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 290 |
1N5551 |
400 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 291 |
1N5552 |
600 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 292 |
1N5553 |
800 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 293 |
1N5554 |
1000 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 294 |
1N5946 |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 295 |
1N5946A |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 296 |
1N5946C |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 297 |
1N5946D |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 298 |
1N754 |
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). |
Fairchild Semiconductor |
| 299 |
1SMB100A |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 5.0 THRU 170 VOLTS |
Central Semiconductor |
| 300 |
1SMB100CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 5.0 THRU 170 VOLTS |
Central Semiconductor |
| | | |
