No. |
Part Name |
Description |
Manufacturer |
271 |
DS1021S-25_T_R |
Programmable 8 bit Silicon Delay Line |
Dallas Semiconductor |
272 |
DS1021S-50 |
Programmable 8 bit Silicon Delay Line |
Dallas Semiconductor |
273 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
274 |
DS_K6F2008U2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
275 |
DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
276 |
DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
277 |
DS_K6F4016U6G |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
278 |
DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
279 |
DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
280 |
E191D |
8 bit shift register, possibly equivalent SN8491N |
RFT |
281 |
ER1451 |
700 Bit Serial Electrically Alterable Read Only Memory |
General Semiconductor |
282 |
FM24C256M8 |
256K BIT SERIAL EEPROM |
Fairchild Semiconductor |
283 |
FM24C256N |
256K BIT SERIAL EEPROM |
Fairchild Semiconductor |
284 |
FSSD07 |
1-Bit / 4 Bit SD/SDIO and MMC Dual-Host Multiplexer |
Fairchild Semiconductor |
285 |
GM76C88 |
8192 x 8 Bit SRAM |
GoldStar |
286 |
GM76C88-10 |
8,192 X 8 BIT STATIC RAM |
etc |
287 |
GM76C88-70 |
8,192 X 8 BIT STATIC RAM |
etc |
288 |
GM76C88-85 |
8,192 X 8 BIT STATIC RAM |
etc |
289 |
GM76C88AL |
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS |
etc |
290 |
GMS34004TK |
Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
291 |
GMS34004TM |
Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
292 |
GMS34004TW |
Program memory: 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
293 |
GMS34112TK |
Program memory:1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
294 |
GMS34112TM |
Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
295 |
GMS34112TW |
Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
296 |
GMS34140TK |
Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
297 |
GMS34140TM |
Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
298 |
GMS34140TW |
Program memory: 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
Hynix Semiconductor |
299 |
GMS81516BT |
ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
Hynix Semiconductor |
300 |
GMS81524BT |
ROM/RAM size:24 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
Hynix Semiconductor |
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