| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2SK3576-T1B |
N Channel enhancement MOS FET |
NEC |
| 272 |
2SK3576-T2B |
N Channel enhancement MOS FET |
NEC |
| 273 |
2SK3577 |
N Channel enhancement MOS FET |
NEC |
| 274 |
2SK3577-T1B |
N Channel enhancement MOS FET |
NEC |
| 275 |
2SK3577-T2B |
N Channel enhancement MOS FET |
NEC |
| 276 |
2SK3663 |
N-Channel enhancement MOS FET for load sw |
NEC |
| 277 |
2SK3664 |
N-Channel enhancement MOS FET for load sw |
NEC |
| 278 |
2SK3749 |
Nch enhancement type MOS FET |
NEC |
| 279 |
2SK3995 |
Silicon N-channel enhancement MOSFET |
Panasonic |
| 280 |
2SK4174 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 281 |
2SK4208 |
Silicon N-channel enhancement MOS FET |
Panasonic |
| 282 |
2SK536 |
N-Channel Enhancement MOS Silicon FET Analog Switch Applications |
SANYO |
| 283 |
2SK583 |
N-Channel Enhancement Silicon MOSFET Analog Switch Applications |
SANYO |
| 284 |
2SK669 |
N-Channel Enhancement Silicon MOSFET Very High-Speed Switch, Analog Switch Applications |
SANYO |
| 285 |
3055L |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 286 |
33661 |
LIN Enhanced Physical Interface |
Motorola |
| 287 |
33742 |
System Basis Chip (SBC) with Enhanced High-Speed CAN Transceiver |
Motorola |
| 288 |
33742S |
System Basis Chip (SBC) with Enhanced High-Speed CAN Transceiver |
Motorola |
| 289 |
35007B |
18-pin Enhanced FLASH/EEPROM 8-bit Microcontroller |
Microchip |
| 290 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 291 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 292 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 293 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 294 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 295 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 296 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 297 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 298 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 299 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 300 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
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