| No. |
Part Name |
Description |
Manufacturer |
| 271 |
1N3296 |
Diode Switching 1.2KV 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 272 |
1N3296A |
Diode Switching 1.2KV 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 273 |
1N3297 |
Diode Switching 1.4KV 100A 2-Pin DO-8 |
New Jersey Semiconductor |
| 274 |
1N3297A |
Diode Switching 1.4KV 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 275 |
1N34 |
Diode Switching 175V 0.5A 2-Pin DO-35 |
New Jersey Semiconductor |
| 276 |
1N3481 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
| 277 |
1N3482 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
| 278 |
1N3491 |
Diode Switching 50V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 279 |
1N3492 |
Diode Switching 100V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 280 |
1N3493 |
Diode Switching 200V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 281 |
1N3494 |
Diode Switching 300V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 282 |
1N3495 |
Diode Switching 400V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
| 283 |
1N3496 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 284 |
1N3497 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 285 |
1N3498 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 286 |
1N3499 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 287 |
1N3569 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 288 |
1N3570 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 289 |
1N3571 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 290 |
1N3572 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 291 |
1N3573 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 292 |
1N3574 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 293 |
1N3595 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 294 |
1N3595 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
| 295 |
1N3595-1 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 296 |
1N360 |
Diode Switching 50V 0.2A 2-Pin DO-35 Tape and Box |
New Jersey Semiconductor |
| 297 |
1N3600 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 298 |
1N3600 |
Silicon signal diode - high current switching |
SESCOSEM |
| 299 |
1N3604 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 300 |
1N3604 |
Silicon planar switching diodes in a glass package |
Siemens |
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