No. |
Part Name |
Description |
Manufacturer |
271 |
1N3296 |
Diode Switching 1.2KV 150A 2-Pin DO-8 |
New Jersey Semiconductor |
272 |
1N3296A |
Diode Switching 1.2KV 150A 2-Pin DO-8 |
New Jersey Semiconductor |
273 |
1N3297 |
Diode Switching 1.4KV 100A 2-Pin DO-8 |
New Jersey Semiconductor |
274 |
1N3297A |
Diode Switching 1.4KV 150A 2-Pin DO-8 |
New Jersey Semiconductor |
275 |
1N34 |
Diode Switching 175V 0.5A 2-Pin DO-35 |
New Jersey Semiconductor |
276 |
1N3481 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
277 |
1N3482 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
278 |
1N3491 |
Diode Switching 50V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
279 |
1N3492 |
Diode Switching 100V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
280 |
1N3493 |
Diode Switching 200V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
281 |
1N3494 |
Diode Switching 300V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
282 |
1N3495 |
Diode Switching 400V 35A 2-Pin DO-21 |
New Jersey Semiconductor |
283 |
1N3496 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
284 |
1N3497 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
285 |
1N3498 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
286 |
1N3499 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
287 |
1N3569 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
288 |
1N3570 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
289 |
1N3571 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
290 |
1N3572 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
291 |
1N3573 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
292 |
1N3574 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
293 |
1N3595 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
294 |
1N3595 |
Diode Switching 150V 0.225A 2-Pin DO-35 |
New Jersey Semiconductor |
295 |
1N3595-1 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
296 |
1N360 |
Diode Switching 50V 0.2A 2-Pin DO-35 Tape and Box |
New Jersey Semiconductor |
297 |
1N3600 |
Leaded Silicon Diode Switching |
Central Semiconductor |
298 |
1N3600 |
Silicon signal diode - high current switching |
SESCOSEM |
299 |
1N3604 |
Silicon signal diode - high speed switching |
SESCOSEM |
300 |
1N3604 |
Silicon planar switching diodes in a glass package |
Siemens |
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