| No. |
Part Name |
Description |
Manufacturer |
| 271 |
HM51S4260CJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 272 |
HM51S4260CJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 273 |
HM51S4260CJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 274 |
HM51S4260CJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 275 |
HM51S4260CLJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 276 |
HM51S4260CLJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 277 |
HM51S4260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 278 |
HM51S4260CLJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 279 |
HM51S4260CLTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 280 |
HM51S4260CLTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 281 |
HM51S4260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 282 |
HM51S4260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 283 |
HM51S4260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 284 |
HM51S4260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 285 |
HM51S4260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 286 |
HM51S4260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 287 |
HM53051P-45 |
45ns; V(cc): -1.0 to +7.0V; 1W; 262,144-word x 4-bit frame memory |
Hitachi Semiconductor |
| 288 |
HM53051P-60 |
60ns; V(cc): -1.0 to +7.0V; 1W; 262,144-word x 4-bit frame memory |
Hitachi Semiconductor |
| 289 |
HM538253J-10 |
100ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 290 |
HM538253J-7 |
70ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 291 |
HM538253J-8 |
80ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 292 |
HM538253RR-10 |
100ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 293 |
HM538253RR-7 |
70ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 294 |
HM538253RR-8 |
80ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 295 |
HM538253TT-10 |
100ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 296 |
HM538253TT-7 |
70ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 297 |
HM538253TT-8 |
80ns; 1W; V(cc): -0.5 to +7.0V; 262,144-word x 8-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 298 |
HYB41256 |
262,144 BIT DYNAMIC RAM |
Siemens |
| 299 |
HYB41256-10 |
262,144 BIT DYNAMIC RAM |
Siemens |
| 300 |
HYB41256-12 |
262,144 BIT DYNAMIC RAM |
Siemens |
| | | |
