| No. |
Part Name |
Description |
Manufacturer |
| 271 |
AM55-0016 |
800-1000 MHz, switched low noise amplifier |
MA-Com |
| 272 |
AM55-0016RTR |
800-1000 MHz, switched low noise amplifier |
MA-Com |
| 273 |
AM55-0016SMB |
800-1000 MHz, switched low noise amplifier |
MA-Com |
| 274 |
AM55-0016TR |
800-1000 MHz, switched low noise amplifier |
MA-Com |
| 275 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 276 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 277 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 278 |
AMC-142SMA |
200-1000 MHz, low noise amplifier, 12 dB gain |
MA-Com |
| 279 |
AMC-155SMA |
300-1000 MHz, high dynamic range amplifier, 12.5 dB gain |
MA-Com |
| 280 |
AMS3100-1.2 |
MICROPOWER VOLTAGE REFERENCE |
Advanced Monolithic Systems |
| 281 |
AMS3100-1.2AM |
1.2V Micropower voltage reference |
Advanced Monolithic Systems |
| 282 |
AMS3100-1.2BM |
1.2V Micropower voltage reference |
Advanced Monolithic Systems |
| 283 |
AMS3100-1.2CM |
1.2V Micropower voltage reference |
Advanced Monolithic Systems |
| 284 |
AMS3100-12 |
MICROPOWER VOLTAGE REFERENCE |
Advanced Monolithic Systems |
| 285 |
AMS3100-12AM |
MICROPOWER VOLTAGE REFERENCE |
Advanced Monolithic Systems |
| 286 |
AMS3100-12BM |
MICROPOWER VOLTAGE REFERENCE |
Advanced Monolithic Systems |
| 287 |
AMS3100-12CM |
MICROPOWER VOLTAGE REFERENCE |
Advanced Monolithic Systems |
| 288 |
APT40DR160HJ |
Rectifier Modules 200-1800V |
Microsemi |
| 289 |
APT90DR160HJ |
Rectifier Modules 200-1800V |
Microsemi |
| 290 |
APTDR40X1601G |
Rectifier Modules 200-1800V |
Microsemi |
| 291 |
APTDR90X1601G |
Rectifier Modules 200-1800V |
Microsemi |
| 292 |
AT10-0009 |
800-1000 MHz, voltage variable absorptive attenuator |
MA-Com |
| 293 |
AT10-0009-TB |
800-1000 MHz, voltage variable absorptive attenuator |
MA-Com |
| 294 |
AT10-0009TR |
800-1000 MHz, voltage variable absorptive attenuator |
MA-Com |
| 295 |
AT27BV400-12JC |
4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 296 |
AT27BV400-12JI |
4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 297 |
AT27BV400-12RC |
4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 298 |
AT27BV400-12RI |
4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 299 |
AT27BV400-12TC |
4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| 300 |
AT27BV400-12TI |
4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM |
Atmel |
| | | |
