No. |
Part Name |
Description |
Manufacturer |
271 |
HER305G |
3.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS |
Jinan Gude Electronic Device |
272 |
HER305G |
400 V, 3 A, high efficiency GPP diode |
Leshan Radio Company |
273 |
HER305G |
HIGH EFFICIENT RECTIFIERS |
Micro Commercial Components |
274 |
HER305G |
Recovery Rectifier |
Rectron Semiconductor |
275 |
HER305G |
Rectifier: High Efficient |
Taiwan Semiconductor |
276 |
HER305G-G |
Ultra Fast Recovery Rectifiers/High Efficiency Rectifiers, VRRM=400V, VR=400V, IO=3A |
Comchip Technology |
277 |
HER505G |
HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER |
etc |
278 |
HER505GP |
HIGH EFFICIENT RECTIFIERS |
Micro Commercial Components |
279 |
HER605G |
6.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS |
Jinan Gude Electronic Device |
280 |
HER605G |
Rectifier: High Efficient |
Taiwan Semiconductor |
281 |
HER605GP |
HIGH EFFICIENT RECTIFIERS |
Micro Commercial Components |
282 |
HER805G |
Rectifier: High Efficient |
Taiwan Semiconductor |
283 |
HERA1605G |
Rectifier: High Efficient |
Taiwan Semiconductor |
284 |
HERA805G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
285 |
HERAF1005G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
286 |
HERAF1605G |
Rectifier: High Efficient |
Taiwan Semiconductor |
287 |
HERAF805G |
Rectifier: High Efficient |
Taiwan Semiconductor |
288 |
HERF1005G |
Rectifier: High Efficient |
Taiwan Semiconductor |
289 |
HERF1605G |
Rectifier: High Efficient |
Taiwan Semiconductor |
290 |
HYM321005GS-50 |
1M x 32 Bit DRAM Module |
Infineon |
291 |
HYM321005GS-50 |
1M x 32-Bit Dynamic RAM Module |
Siemens |
292 |
HYM321005GS-60 |
1M x 32 Bit DRAM Module |
Infineon |
293 |
HYM321005GS-60 |
1M x 32-Bit Dynamic RAM Module |
Siemens |
294 |
HYM322005GS-50 |
2M x 32 Bit DRAM Module |
Infineon |
295 |
HYM322005GS-50 |
2M x 32-Bit Dynamic RAM Module |
Siemens |
296 |
HYM322005GS-60 |
2M x 32 Bit DRAM Module |
Infineon |
297 |
HYM322005GS-60 |
2M x 32-Bit Dynamic RAM Module |
Siemens |
298 |
HYM64V1005GU-5 |
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module |
Siemens |
299 |
HYM64V1005GU-50 |
1M x 64 Bit DRAM Module unbuffered |
Infineon |
300 |
HYM64V1005GU-50 |
3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module |
Siemens |
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