No. |
Part Name |
Description |
Manufacturer |
271 |
FX20ASJ-2 |
Transistors>Switching/MOSFETs |
Renesas |
272 |
FX30ASJ-03 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
273 |
FX30ASJ-03 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
274 |
FX30ASJ-03 |
Transistors>Switching/MOSFETs |
Renesas |
275 |
HIP1030AS |
1A High Side Driver with Overload Protection |
Intersil |
276 |
HIP1090AS |
Protected High Side Power Switch with Transient Suppression |
Intersil |
277 |
HIP2060AS1 |
60V/ 10A Half Bridge Power MOSFET Array |
Intersil |
278 |
HIP2060AS2 |
60V/ 10A Half Bridge Power MOSFET Array |
Intersil |
279 |
HIP2060AS3 |
60V/ 10A Half Bridge Power MOSFET Array |
Intersil |
280 |
HM514400AS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
281 |
HM514400AS-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
282 |
HM514400AS-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
283 |
HM514400ASLJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
284 |
HM514400ASLJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
285 |
HM514400ASLJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
286 |
HM514400ASLR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
287 |
HM514400ASLR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
288 |
HM514400ASLR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
289 |
HM514400ASLRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
290 |
HM514400ASLRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
291 |
HM514400ASLRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
292 |
HM514400ASLS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
293 |
HM514400ASLS-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
294 |
HM514400ASLS-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
295 |
HM514400ASLT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
296 |
HM514400ASLT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
297 |
HM514400ASLT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
298 |
HM514400ASLTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
299 |
HM514400ASLTT-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
300 |
HM514400ASLTT-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
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