No. |
Part Name |
Description |
Manufacturer |
271 |
PBSS4120T |
20 V; 1 A NPN low VCEsat (BISS) transistor |
Nexperia |
272 |
PBSS4120T |
20 V; 1 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
273 |
PBSS4120T |
PBSS4120T; 20 V; 1 A NPN low VCEsat (BISS) transistor |
Philips |
274 |
PBSS4120T |
PBSS4120T; 20 V; 1 A NPN low VCEsat (BISS) transistor |
Philips |
275 |
PBSS4120T |
20 V; 1 A NPN low VCEsat (BISS) transistor |
Philips |
276 |
PBSS5120T |
20 V; 1 A PNP low VCEsat (BISS) transistor |
Nexperia |
277 |
PBSS5120T |
20 V; 1 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
278 |
PBSS5120T |
20 V, 1 A PNP low VCEsat (BISS) transistor |
Philips |
279 |
PCF2120TK |
Quartz oscillator |
NXP Semiconductors |
280 |
SFR9120TF |
100V P-Channel A-FET / Substitute of IRFR9120 |
Fairchild Semiconductor |
281 |
SFR9120TM |
100V P-Channel A-FET / Substitute of IRFR9120 |
Fairchild Semiconductor |
282 |
SFU9120TU |
100V P-Channel A-FET / Substitute of IRFU9120 |
Fairchild Semiconductor |
283 |
SSL4120T |
Resonant power supply controller IC with PFC for LED lighting |
NXP Semiconductors |
284 |
SSM3J120TU |
Small-signal MOSFET |
TOSHIBA |
285 |
STV6120TC60 |
8PSK/QPSK low-power 3.3-V dual wide-band satellite tuner IC |
ST Microelectronics |
286 |
T10A120T |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs). |
Littelfuse |
287 |
T10B120T |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 110V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs). |
Littelfuse |
288 |
TBA120T |
Amplifier-limiter FI and FM demodulator |
IPRS Baneasa |
289 |
TBA120T |
FM IF Amplifier and Demodulator |
PLESSEY Semiconductors |
290 |
TBA120T |
FM IF amplifier with demodulator, datasheet in german |
Siemens |
291 |
TBA120T |
FM IF Amplifier with Demodulator |
Siemens |
292 |
TBA120T |
FM IF amplifier and demodulator (for ceramic resonator) |
Siemens |
293 |
TBA120T |
FM IF amplifier and demodulator |
TEMIC |
294 |
TIP120TU |
NPN Epitaxial Darlington Transistor |
Fairchild Semiconductor |
295 |
UPC8120T |
-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE |
NEC |
296 |
UPC8120T |
VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE |
NEC |
297 |
UPC8120T-E3 |
VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE |
NEC |
298 |
V62C1161024L-120T |
Ultra Low Power 64K x 16 CMOS SRAM |
Mosel Vitelic Corp |
299 |
V62C1161024LL-120T |
Ultra low power 64K x 16 CMOS SRAM |
Mosel Vitelic Corp |
300 |
V62C1162048L-120T |
Ultra Low Power 128K x 16 CMOS SRAM |
Mosel Vitelic Corp |
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