| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N4125 |
Switching PNP transistor |
FERRANTI |
| 272 |
2N4125 |
General purpose PNP transistor |
FERRANTI |
| 273 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
| 274 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 275 |
2N4125 |
PNP silicon transistor |
Motorola |
| 276 |
2N4125 |
Silicon PNP Transistor |
Motorola |
| 277 |
2N4125 |
PNP Silicon Transistor |
NEC |
| 278 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 279 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 280 |
2N4125BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 281 |
2N4125TA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 282 |
2N4125TAR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 283 |
2N4125TF |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 284 |
2N4125TFR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 285 |
2N5050 |
Trans GP BJT NPN 125V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 286 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 287 |
2N6125 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 288 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 289 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
| 290 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
| 291 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
| 292 |
2N6125 |
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 293 |
2N6125 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 294 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 295 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
| 296 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
| 297 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
| 298 |
2N6306 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
| 299 |
2N6307 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
| 300 |
2N6308 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
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