No. |
Part Name |
Description |
Manufacturer |
271 |
IDT7217L65FB |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
272 |
IDT7217L65G |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
273 |
IDT7217L65GB |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
274 |
IDT7217L65J |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
275 |
IDT7217L65JB |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
276 |
IDT7217L75C |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
277 |
IDT7217L75CB |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
278 |
IDT7217L75F |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
279 |
IDT7217L75FB |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
280 |
IDT7217L75G |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
281 |
IDT7217L75GB |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
282 |
IDT7217L75J |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
283 |
IDT7217L75JB |
16 x 16 PARALLEL CMOS MULTIPLIERS |
IDT |
284 |
IM29C510 |
CMOS 16 x 16 Bit, 65ns (Commercial) 75ns (Military) Multiplier/Accumulator |
Intersil |
285 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
286 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
287 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
288 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
289 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
290 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
291 |
K4R271669B-MCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
292 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
293 |
K4R271669B-MCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
294 |
K4R271669B-NCG6 |
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
295 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
296 |
K4R271669B-NCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz |
Samsung Electronic |
297 |
KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
298 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
299 |
KM416RD8AC-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
300 |
KM416RD8AD-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
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