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Datasheets for 16 X

Datasheets found :: 476
Page: | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 |
No. Part Name Description Manufacturer
271 IDT7217L65FB 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
272 IDT7217L65G 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
273 IDT7217L65GB 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
274 IDT7217L65J 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
275 IDT7217L65JB 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
276 IDT7217L75C 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
277 IDT7217L75CB 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
278 IDT7217L75F 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
279 IDT7217L75FB 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
280 IDT7217L75G 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
281 IDT7217L75GB 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
282 IDT7217L75J 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
283 IDT7217L75JB 16 x 16 PARALLEL CMOS MULTIPLIERS IDT
284 IM29C510 CMOS 16 x 16 Bit, 65ns (Commercial) 75ns (Military) Multiplier/Accumulator Intersil
285 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
286 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
287 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
288 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
289 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
290 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
291 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
292 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
293 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
294 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
295 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
296 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
297 KM416RD8AC-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
298 KM416RD8AC-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
299 KM416RD8AC-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
300 KM416RD8AD-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic


Datasheets found :: 476
Page: | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 |



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