| No. |
Part Name |
Description |
Manufacturer |
| 271 |
IS24C16-PI |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM |
Integrated Silicon Solution Inc |
| 272 |
MCM4116 |
16,384 BIT DYNAMIC RANDOM ACCESS MEMORY |
Motorola |
| 273 |
MCM4116B |
16,384 BIT DYNAMIC RANDOM ACCESS MEMORY |
Motorola |
| 274 |
MK4116 |
16,384 X 1 BIT DYNAMIC RAM |
etc |
| 275 |
MK4116P-2 |
16,384 X 1 BIT DYNAMIC RAM |
etc |
| 276 |
MK4116P-3 |
16,384 X 1 BIT DYNAMIC RAM |
etc |
| 277 |
MSM5188 |
16,384-WORD x 4-BIT SPEED STATIC CMOS RAM |
OKI electronic componets |
| 278 |
MT90869 |
16,384 x 16,384 Channels Flexible 16 k Digital Switch (F16kDX) with up to 64 Input and 64 Output Streams and data rates from 2 to 32 Mbps |
Zarlink Semiconductor |
| 279 |
MT90869 |
16,384 x 16,384 Channels Flexible 16 k Digital Switch (F16kDX) with up to 64 Input and 64 Output Streams and data rates from 2 to 32 Mbps |
Zarlink Semiconductor |
| 280 |
NM24C16 |
16,384 Bit Serial EEPROM (I2C Synchronous 2-Wire Bus) |
National Semiconductor |
| 281 |
NM24C16L |
16,384-Bit Serial EEPROM (I2C Synchronous 2-Wire Bus) |
National Semiconductor |
| 282 |
NM25C160 |
16,384-Bit Serial Interface CMOS EEPROM (Serial Peripheral Interface (SPI) Synchronous Bus) |
National Semiconductor |
| 283 |
NM93C86AL |
16,384-Bit Serial Interface, Low Voltage CMOS EEPROM (MICROWIRE Synchronous Bus) |
National Semiconductor |
| 284 |
NMC27C16B |
16,384 Bit (2048 x 8) CMOS PROM |
National Semiconductor |
| 285 |
NMC27C16BQ |
16,384-Bit (2048 x 8) CMOS EPROM |
Fairchild Semiconductor |
| 286 |
NMC27C16BQ150 |
16,384-Bit (2048 x 8) CMOS EPROM |
Fairchild Semiconductor |
| 287 |
NMC27C16BQ200 |
16,384-Bit (2048 x 8) CMOS EPROM |
Fairchild Semiconductor |
| 288 |
NMC27C16BQE200 |
16,384-Bit (2048 x 8) CMOS EPROM |
Fairchild Semiconductor |
| 289 |
TMM2018AP |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 290 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 291 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 292 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 293 |
TMS4416 |
16,384 WORD BY 4 BIT DYNAMIC RAM |
Texas Instruments |
| 294 |
TMS4416-12 |
120ns; V(except Vdd): -1.5 to +10.0V; 50mA; 1W; 16,384-word by 4-bit dynamic RAM |
Texas Instruments |
| 295 |
TMS4416-15 |
150ns; V(except Vdd): -1.5 to +10.0V; 50mA; 1W; 16,384-word by 4-bit dynamic RAM |
Texas Instruments |
| 296 |
TMS4416-20 |
200ns; V(except Vdd): -1.5 to +10.0V; 50mA; 1W; 16,384-word by 4-bit dynamic RAM |
Texas Instruments |
| 297 |
UPB100480B-10 |
16,384 x 1-bit 100K ECL RAM. Access time(max) 10 ns. |
NEC |
| 298 |
UPB100480B-15 |
16,384 x 1-bit 100K ECL RAM. Access time(max) 15 ns. |
NEC |
| 299 |
UPB100480D-10 |
16,384 x 1-bit 100K ECL RAM. Access time(max) 10 ns. |
NEC |
| 300 |
UPB100480D-15 |
16,384 x 1-bit 100K ECL RAM. Access time(max) 15 ns. |
NEC |
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