| No. |
Part Name |
Description |
Manufacturer |
| 271 |
M28F256-12C6TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 272 |
M28F256-12XB1TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 273 |
M28F256-12XB3TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 274 |
M28F256-12XB6TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 275 |
M28F256-12XC1TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 276 |
M28F256-12XC3TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 277 |
M28F256-12XC6TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
| 278 |
M4A3-512/256-12FAC |
High Performance E 2 CMOS In-System Programmable Logic |
Lattice Semiconductor |
| 279 |
M4A3-512/256-12FAI |
High Performance E 2 CMOS In-System Programmable Logic |
Lattice Semiconductor |
| 280 |
M5-512_256-12AC |
12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) |
Lattice Semiconductor |
| 281 |
M5-512_256-12AI |
12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) |
Lattice Semiconductor |
| 282 |
M5LV-512/256-12AC |
Fifth Generation MACH Architecture |
Lattice Semiconductor |
| 283 |
M5LV-512/256-12AI |
Fifth Generation MACH Architecture |
Lattice Semiconductor |
| 284 |
M95256-125 |
Automotive 256 Kbit SPI bus EEPROM |
ST Microelectronics |
| 285 |
MT4C4256-12 |
256K X 4RAM(FAST PAGE MODE) |
Austin Semiconductor |
| 286 |
P3C1256-12JC |
12 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
| 287 |
P3C1256-12PC |
12 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
| 288 |
P4C1256-12JC |
12 ns, static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
| 289 |
P4C1256-12PC |
12 ns, static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
| 290 |
SMJ4256-12FV |
262144-bit dynamic random-access memory, 120ns |
Texas Instruments |
| 291 |
SMJ4256-12JD |
262144-bit dynamic random-access memory, 120ns |
Texas Instruments |
| 292 |
SMJ44C256-12 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
| 293 |
TMS27C/PC256-12 |
TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES |
Texas Instruments |
| 294 |
TMS27C256-12 |
120ns; V(cc): -0.6 to +7V; 8-bit programmable read-only memory |
Texas Instruments |
| 295 |
TMS27C256-120JL |
262 144-Bitprogrammable Read-Only Memory 28-CDIP 0 to 70 |
Texas Instruments |
| 296 |
TMS27C256-12JL |
262 144-Bitprogrammable Read-Only Memory 28-CDIP 0 to 70 |
Texas Instruments |
| 297 |
TMS27PC256-12 |
120ns; V(cc): -0.6 to +7V; 8-bit programmable read-only memory |
Texas Instruments |
| 298 |
TMS27PC256-120NL |
262 144-Bitprogrammable Read-Only Memory 28-PDIP 0 to 70 |
Texas Instruments |
| 299 |
TMS27PC256-12FME |
262 144-Bitprogrammable Read-Only Memory |
Texas Instruments |
| 300 |
TMS27PC256-12FML |
262 144-Bitprogrammable Read-Only Memory |
Texas Instruments |
| | | |
