| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N3866 |
Silicon NPN overlay epitaxial planar RF transistor |
ICCE |
| 272 |
2N3866 |
Transmitting transistor NPN |
mble |
| 273 |
2N3866 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 274 |
2N3866 |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
| 275 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 276 |
2N3866 |
Silicon NPN Transistor |
Motorola |
| 277 |
2N3866 |
R.F. power transistor |
Mullard |
| 278 |
2N3866 |
Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 |
New Jersey Semiconductor |
| 279 |
2N3866 |
Silicon planar epitaxial overlay transistors |
Philips |
| 280 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 281 |
2N3866 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
| 282 |
2N3866 |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 283 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 284 |
2N3866 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 285 |
2N3866 |
RF transistor |
Texas Instruments |
| 286 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
| 287 |
2N3866A |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 288 |
2N3866A |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
| 289 |
2N3866A |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 290 |
2N3866AF |
Chip: geometry 1007; polarity NPN |
Semicoa Semiconductor |
| 291 |
2N3866AUB |
NPN Transistor |
Microsemi |
| 292 |
2N3866AUB |
Chip Type 2C3866A Geometry 1007 Polarity NPN |
Semicoa Semiconductor |
| 293 |
2N3866UB |
NPN Transistor |
Microsemi |
| 294 |
2N3867 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 295 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 296 |
2N3867 |
PNP Transistor |
Microsemi |
| 297 |
2N3867 |
PNP Transistor |
Microsemi |
| 298 |
2N3867 |
Silicon PNP Transistor |
Motorola |
| 299 |
2N3867 |
Trans GP BJT PNP 40V 3A 3-Pin TO-5 |
New Jersey Semiconductor |
| 300 |
2N3867 |
Planar transistor for switching applications |
SGS-ATES |
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