No. |
Part Name |
Description |
Manufacturer |
271 |
2N6287 |
PNP Darlington Transistor |
Microsemi |
272 |
2N6287 |
POWER TRANSISTORS(20A,160W) |
MOSPEC Semiconductor |
273 |
2N6287 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
274 |
2N6287 |
Trans Darlington PNP 100V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
275 |
2N6287 |
Power 20A 100V Darlington PNP |
ON Semiconductor |
276 |
2N6287 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
277 |
2N6287 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
278 |
2N6287 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
279 |
2N6287 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6284 |
Silicon Transistor Corporation |
280 |
2N6287 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6284 |
Silicon Transistor Corporation |
281 |
2N6287 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
ST Microelectronics |
282 |
2N6287E3 |
Darlington Transistors |
Microsemi |
283 |
2N6287G |
Trans Darlington PNP 100V 20A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
284 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
285 |
2N6288 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
286 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
287 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
288 |
2N6288 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
289 |
2N6288 |
7A complementary silicon plastic 65W power NPN transistor |
Motorola |
290 |
2N6288 |
Power 7A 30V Discrete NPN |
ON Semiconductor |
291 |
2N6288 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
292 |
2N6289 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
293 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
294 |
2N629 |
Germanium PNP Transistor |
Motorola |
295 |
2N629 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
296 |
2N6290 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
297 |
2N6290 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
298 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
299 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
300 |
2N6290 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
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