| No. |
Part Name |
Description |
Manufacturer |
| 271 |
1SS350 |
UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode |
SANYO |
| 272 |
1V5KE350(C)A |
TransientVoltageSuppressors |
Fairchild Semiconductor |
| 273 |
1V5KE350A |
Transient Voltage Suppressors |
Fairchild Semiconductor |
| 274 |
1V5KE350CA |
Transient Voltage Suppressors |
Fairchild Semiconductor |
| 275 |
2020-350 |
Delay 350 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 276 |
2020-350 |
Delay 350 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 277 |
2021-350 |
Delay 350 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 278 |
2021-350 |
Delay 350 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 279 |
2032-6350-00 |
0.5-2 GHz, 3 dB hybrid coupler |
MA-Com |
| 280 |
2032-6350-00 |
3 dB Hybrid Couplers |
Tyco Electronics |
| 281 |
210007039-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 282 |
232264053502 |
NTC Thermistors, Accuracy Line |
Vishay |
| 283 |
2350MC |
Mating Connector |
Burr Brown |
| 284 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 285 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 286 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 287 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 288 |
2C3501 |
Chip Type 2C3501 Geometry 5620 Polarity NPN |
Semicoa Semiconductor |
| 289 |
2C3501 |
Chip Type 2C3501 Geometry 5620 Polarity NPN |
Semicoa Semiconductor |
| 290 |
2C3506 |
Chip Type 2C3506 Geometry 1506 Polarity NPN |
Semicoa Semiconductor |
| 291 |
2C3506 |
Chip Type 2C3506 Geometry 1506 Polarity NPN |
Semicoa Semiconductor |
| 292 |
2N2350 |
Silicon NPN Transistor |
Motorola |
| 293 |
2N2350A |
Silicon NPN Transistor |
Motorola |
| 294 |
2N2535N3 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 295 |
2N2535N5 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 296 |
2N2540N8 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 297 |
2N3350 |
Silicon PNP Transistor |
Motorola |
| 298 |
2N3350 |
Trans GP BJT NPN 3-Pin TO-5 |
New Jersey Semiconductor |
| 299 |
2N3350 |
PNP differential amplifiers - silicon transistor |
Sprague |
| 300 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
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