No. |
Part Name |
Description |
Manufacturer |
271 |
M464S3254ETS |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
272 |
M464S3254ETS-C7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
273 |
M464S3354BTS |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
274 |
M464S3354BTS-C |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
275 |
M464S3354BTS-C7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
276 |
M464S3354BTS-CL7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
277 |
M464S3354BTS-L7A |
SDRAM Unbuffered SODIMM |
Samsung Electronic |
278 |
M5M4V64S30ATP-10 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
279 |
M5M4V64S30ATP-10 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
280 |
M5M4V64S30ATP-10L |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
281 |
M5M4V64S30ATP-12 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
282 |
M5M4V64S30ATP-8 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
283 |
M5M4V64S30ATP-8 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
284 |
M5M4V64S30ATP-8A |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
285 |
M5M4V64S30ATP-8L |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
Mitsubishi Electric Corporation |
286 |
MDE-34S301K |
300V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
MDE Semiconductor |
287 |
MDE-34S331K |
330V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
MDE Semiconductor |
288 |
MDE-34S361K |
360V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
MDE Semiconductor |
289 |
MDE-34S391K |
390V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
MDE Semiconductor |
290 |
MT1164S3-RG |
Packaged LEDS/PCB Mount Indicators |
Marktech Optoelectronics |
291 |
MT2164S3-G |
Packaged LEDS/PCB Mount Indicators |
Marktech Optoelectronics |
292 |
MT3164S3-Y |
Packaged LEDS/PCB Mount Indicators |
Marktech Optoelectronics |
293 |
MT4164S3-HR |
Packaged LEDS/PCB Mount Indicators |
Marktech Optoelectronics |
294 |
MT4164S3-O |
Packaged LEDS/PCB Mount Indicators |
Marktech Optoelectronics |
295 |
MT4S300T |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
296 |
MT4S300U |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
297 |
MT4S301T |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
298 |
MT4S301U |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
299 |
MT4S32U |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
300 |
MT4S34U |
RF Bipolar Transistors |
TOSHIBA |
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