No. |
Part Name |
Description |
Manufacturer |
271 |
GLT6200L16SL-55FG |
55ns; Ultra low power 128K x 16 CMOS SRAM |
G-LINK Technology |
272 |
GLT6200L16SL-55TC |
55ns; Ultra low power 128K x 16 CMOS SRAM |
G-LINK Technology |
273 |
GLT6200L16SLI-55FG |
55ns; Ultra low power 128K x 16 CMOS SRAM |
G-LINK Technology |
274 |
GLT6200L16SLI-55TC |
55ns; Ultra low power 128K x 16 CMOS SRAM |
G-LINK Technology |
275 |
GM76C8128CL-55 |
131,072 words x 8 bit CMOS static RAM, 55ns |
LG Semiconductor |
276 |
GM76C8128CLE-55 |
131,072 words x 8 bit CMOS static RAM, 55ns |
LG Semiconductor |
277 |
GM76C8128CLI-55 |
131,072 words x 8 bit CMOS static RAM, 55ns |
LG Semiconductor |
278 |
GM76C8128CLL-55 |
131,072 words x 8 bit CMOS static RAM, low power, 55ns |
LG Semiconductor |
279 |
GM76C8128CLLE-55 |
131,072 words x 8 bit CMOS static RAM, low power, 55ns |
LG Semiconductor |
280 |
GM76C8128CLLI-55 |
131,072 words x 8 bit CMOS static RAM, low power, 55ns |
LG Semiconductor |
281 |
HM628128ALFP-5 |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
282 |
HM628128ALFP-5L |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
283 |
HM628128ALFP-5SL |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
284 |
HM628128ALP-5 |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
285 |
HM628128ALP-5L |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
286 |
HM628128ALP-5SL |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
287 |
HM628128ALR-5 |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
288 |
HM628128ALR-5L |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
289 |
HM628128ALT-5 |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
290 |
HM628128ALT-5L |
131,072-word x 8-bit high speed CMOS static RAM, 55ns |
Hitachi Semiconductor |
291 |
HM6287LP-55 |
55ns; -0.5 to +7.0V; 1W; 65536-word x 1-bit high speed CMOS static RAM |
Hitachi Semiconductor |
292 |
HM6287P-55 |
55ns; -0.5 to +7.0V; 1W; 65536-word x 1-bit high speed CMOS static RAM |
Hitachi Semiconductor |
293 |
HY29F040AC-55 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
294 |
HY29F040AC-55E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
295 |
HY29F040AC-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
296 |
HY29F040AP-55 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
297 |
HY29F040AP-55E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
298 |
HY29F040AP-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
299 |
HY29F040AR-55 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
300 |
HY29F040AR-55E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
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