| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 272 |
2SB1602 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 273 |
2SC4602 |
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications |
SANYO |
| 274 |
2SC6023 |
NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications |
SANYO |
| 275 |
2SC6024 |
UHF to C Band Low-Noise Amplifier and OSC Applications |
SANYO |
| 276 |
2SC6026CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 277 |
2SC6026MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 278 |
2SD0602 |
Silicon NPN epitaxial planer type |
Panasonic |
| 279 |
2SD0602A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 280 |
2SD602 |
Silicon NPN epitaxial planer type |
Panasonic |
| 281 |
2SD602A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 282 |
2SJ602 |
Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263 |
NEC |
| 283 |
2SJ602-S |
Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263 |
NEC |
| 284 |
2SJ602-Z |
MOS FIELD EFFECT TRANSISTOR |
NEC |
| 285 |
2SJ602-ZJ |
Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263 |
NEC |
| 286 |
2SK2602 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications |
TOSHIBA |
| 287 |
3602S |
3602S |
Unknow |
| 288 |
3602S |
3602S |
Unknow |
| 289 |
37M602 |
ENHANCED SUPER I/O CONTROLLER WITH INFRARED SUPPORT |
SMSC Corporation |
| 290 |
40602 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
| 291 |
5962-0323602QXA |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
| 292 |
5962-0323602QXC |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 293 |
5962-0323602QXX |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option. |
Aeroflex Circuit Technology |
| 294 |
5962-0323602VXA |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
| 295 |
5962-0323602VXC |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold. |
Aeroflex Circuit Technology |
| 296 |
5962-0323602VXX |
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option. |
Aeroflex Circuit Technology |
| 297 |
5962-0623602 |
670MHz Low Noise Amplifiers |
Intersil |
| 298 |
5962-0625602 |
1.4GHz Current Feedback Amplifiers with Enable |
Intersil |
| 299 |
5962-1120602 |
30W Total Output Power 5 Vin +1.2 Vout Single DC-DC Radiation Hardened Converter in a SBB Package. |
International Rectifier |
| 300 |
5962-7602001VCA |
Quadruple 2-Input High-Voltage Interface Positive-NAND Gates |
Texas Instruments |
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