No. |
Part Name |
Description |
Manufacturer |
271 |
KM416RD32AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
272 |
KM416RD32C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
273 |
KM416RD32D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
274 |
KM416RD4AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
275 |
KM416RD4AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
276 |
KM416RD4C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
277 |
KM416RD4D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
278 |
KM416RD8AC |
128/144Mbit RDRAM |
Samsung Electronic |
279 |
KM416RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
280 |
KM416RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
281 |
KM416RD8AC(DB)-RCG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
282 |
KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
283 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
284 |
KM416RD8AC-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
285 |
KM416RD8AD |
128/144Mbit RDRAM |
Samsung Electronic |
286 |
KM416RD8AD-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
287 |
KM416RD8AD-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
288 |
KM416RD8AD-RK80 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
289 |
KM416RD8AS |
Direct RDRAM |
Samsung Electronic |
290 |
KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package |
Samsung Electronic |
291 |
KM416RD8AS-RM80 |
256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
292 |
KM416RD8AS-SCM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package |
Samsung Electronic |
293 |
KM416RD8AS-SM80 |
256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
294 |
KM416RD8C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
295 |
KM416RD8D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
296 |
LNG216RDR |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
297 |
LNG226RDR |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
298 |
LNG816RDD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
299 |
M24C16RDW1T |
16/8/4/2/1 Kbit Serial IC Bus EEPROM |
ST Microelectronics |
300 |
M24C16RDW3T |
16/8/4/2/1 Kbit Serial IC Bus EEPROM |
ST Microelectronics |
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