No. |
Part Name |
Description |
Manufacturer |
271 |
FR11-0001 |
869-894 MHz,3-port DROP-IN citculator |
MA-Com |
272 |
FR11-0001 |
3- Port DROP - IN CIRCULATOR / ISOLATOR 869 - 894 MHz |
Tyco Electronics |
273 |
FR12-0001 |
869-894 MHz,3-port DROP-IN isolator |
MA-Com |
274 |
FR12-0001 |
3- Port DROP - IN CIRCULATOR / ISOLATOR 869 - 894 MHz |
Tyco Electronics |
275 |
FR21-0001 |
869-894 MHz, dual junction drop-in isolator |
MA-Com |
276 |
FR31-0001 |
869-894 MHz, surface mount circulator |
MA-Com |
277 |
FR32-0001 |
869-894 MHz, surface mount isolator |
MA-Com |
278 |
FR41-0001 |
869-894 MHz,small profile DROP-IN circulator |
MA-Com |
279 |
FR42-0001 |
869-894 MHz,small profile DROP-IN circulator |
MA-Com |
280 |
FZT869 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
281 |
FZT869 |
NPN Low Sat Transistor |
Zetex Semiconductors |
282 |
G869 |
Gold Bond Germanium Diode |
ITT Semiconductors |
283 |
ICS86953I |
Low Skew, 1-to-9 Differential-to-LVCMOS Zero Delay Buffer |
Texas Instruments |
284 |
ICS86953I |
Low Skew, 1-to-9 Differential-to-LVCMOS Zero Delay Buffer |
Texas Instruments |
285 |
ICS86953I |
Low Skew, 1-to-9 Differential-to-LVCMOS Zero Delay Buffer |
Texas Instruments |
286 |
ICS86953I-147 |
Low Skew, 1-to-9 Differential-to-LVCMOS / LVTTL Zero Delay Buffer |
Texas Instruments |
287 |
ICS86953I-147 |
Low Skew, 1-to-9 Differential-to-LVCMOS / LVTTL Zero Delay Buffer |
Texas Instruments |
288 |
ICS86953I-147 |
Low Skew, 1-to-9 Differential-to-LVCMOS / LVTTL Zero Delay Buffer |
Texas Instruments |
289 |
ICS86962I-01 |
Low Skew, 1-to-18 LVCMOS/LVTTL Zero Delay Buffer |
Texas Instruments |
290 |
ICS86962I-01 |
Low Skew, 1-to-18 LVCMOS/LVTTL Zero Delay Buffer |
Texas Instruments |
291 |
ICS86962I-01 |
Low Skew, 1-to-18 LVCMOS/LVTTL Zero Delay Buffer |
Texas Instruments |
292 |
ISL78692 |
Li-ion/Li-Polymer Battery Charger |
Intersil |
293 |
ISL88694 |
SMBus Accelerator (SMA) |
Intersil |
294 |
K4R271869B-MCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
295 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
296 |
K4R271869B-MCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
297 |
K4R271869B-NCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. |
Samsung Electronic |
298 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
299 |
K4R271869B-NCK8 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
300 |
K4R441869A |
Direct RDRAM |
Samsung Electronic |
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