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Datasheets for 869

Datasheets found :: 977
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No. Part Name Description Manufacturer
271 FR11-0001 869-894 MHz,3-port DROP-IN citculator MA-Com
272 FR11-0001 3- Port DROP - IN CIRCULATOR / ISOLATOR 869 - 894 MHz Tyco Electronics
273 FR12-0001 869-894 MHz,3-port DROP-IN isolator MA-Com
274 FR12-0001 3- Port DROP - IN CIRCULATOR / ISOLATOR 869 - 894 MHz Tyco Electronics
275 FR21-0001 869-894 MHz, dual junction drop-in isolator MA-Com
276 FR31-0001 869-894 MHz, surface mount circulator MA-Com
277 FR32-0001 869-894 MHz, surface mount isolator MA-Com
278 FR41-0001 869-894 MHz,small profile DROP-IN circulator MA-Com
279 FR42-0001 869-894 MHz,small profile DROP-IN circulator MA-Com
280 FZT869 Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors Diodes
281 FZT869 NPN Low Sat Transistor Zetex Semiconductors
282 G869 Gold Bond Germanium Diode ITT Semiconductors
283 ICS86953I Low Skew, 1-to-9 Differential-to-LVCMOS Zero Delay Buffer Texas Instruments
284 ICS86953I Low Skew, 1-to-9 Differential-to-LVCMOS Zero Delay Buffer Texas Instruments
285 ICS86953I Low Skew, 1-to-9 Differential-to-LVCMOS Zero Delay Buffer Texas Instruments
286 ICS86953I-147 Low Skew, 1-to-9 Differential-to-LVCMOS / LVTTL Zero Delay Buffer Texas Instruments
287 ICS86953I-147 Low Skew, 1-to-9 Differential-to-LVCMOS / LVTTL Zero Delay Buffer Texas Instruments
288 ICS86953I-147 Low Skew, 1-to-9 Differential-to-LVCMOS / LVTTL Zero Delay Buffer Texas Instruments
289 ICS86962I-01 Low Skew, 1-to-18 LVCMOS/LVTTL Zero Delay Buffer Texas Instruments
290 ICS86962I-01 Low Skew, 1-to-18 LVCMOS/LVTTL Zero Delay Buffer Texas Instruments
291 ICS86962I-01 Low Skew, 1-to-18 LVCMOS/LVTTL Zero Delay Buffer Texas Instruments
292 ISL78692 Li-ion/Li-Polymer Battery Charger Intersil
293 ISL88694 SMBus Accelerator (SMA) Intersil
294 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
295 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
296 K4R271869B-MCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
297 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
298 K4R271869B-NCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
299 K4R271869B-NCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
300 K4R441869A Direct RDRAM Samsung Electronic


Datasheets found :: 977
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