| No. |
Part Name |
Description |
Manufacturer |
| 271 |
SA850A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=500Watts, VRWM=85V, Tolerance=5% |
Comchip Technology |
| 272 |
SA850A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=500Watts, VRWM=85V, Tolerance=5% |
Comchip Technology |
| 273 |
SA850CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=500Watts, VRWM=85V, Tolerance=5% |
Comchip Technology |
| 274 |
SA850CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=500Watts, VRWM=85V, Tolerance=5% |
Comchip Technology |
| 275 |
SAM5281 |
85 mW, 30 mA, dual chip LED lamp |
AUK Corp |
| 276 |
SB3318-GB |
85 mW, 20 mA, high brightness chip LED lamp |
AUK Corp |
| 277 |
SB3417B |
85 mW, 20 mA, LED lamp |
AUK Corp |
| 278 |
SB5311-HB |
85 mW, 20 mA, high brightness chip LED lamp |
AUK Corp |
| 279 |
SB5311B |
85 mW, 20 mA, LED lamp |
AUK Corp |
| 280 |
SB5312-HB |
85 mW, 20 mA, high brightness chip LED lamp |
AUK Corp |
| 281 |
SD1398 |
850-960 MHz APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 282 |
SD1398 |
850-960 MHZ APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 283 |
SKY66005-11 |
850 to 920 MHz, +19 dBm Linear Power Amplifier |
Skyworks Solutions |
| 284 |
SKY66185-11 |
851 to 894 MHz Linear Power Amplifier |
Skyworks Solutions |
| 285 |
SPA-1118 |
850 MHz 1 watt power amplifier with active bias. |
Stanford Microdevices |
| 286 |
SPA-2118 |
850 MHz, 1 Watt power amplifier with active bias. |
Stanford Microdevices |
| 287 |
SPB21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, D�PAK, RDSon=85mOhm, 21A, NL |
Infineon |
| 288 |
SPI21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=85mOhm, 21A, NL |
Infineon |
| 289 |
SPP21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=85mOhm, 21A, NL |
Infineon |
| 290 |
TC51832F-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 291 |
TC51832FL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 292 |
TC51832P-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 293 |
TC51832PL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 294 |
TC51832SP-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 295 |
TC51832SPL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 296 |
TC54H1024F-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 297 |
TC54H1024P-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 298 |
TC55257BPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 299 |
TC55257BSPL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 300 |
TC55257BTRL-85L |
85ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
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