| No. |
Part Name |
Description |
Manufacturer |
| 271 |
MR1245 |
400A 300V Silicon power rectifier extreme reliability and ruggedness, cathode-to-case |
Motorola |
| 272 |
MR1245R |
400A 300V Silicon power rectifier extreme reliability and ruggedness, anode-to-case |
Motorola |
| 273 |
MR1265 |
650A 300V Silicon power rectifier designed with double-case, multi-cell construction, cathode-to-case |
Motorola |
| 274 |
MR1265R |
650A 300V Silicon power rectifier designed with double-case, multi-cell construction, anode-to-case |
Motorola |
| 275 |
MR5030 |
Industrial Pressfit Silicon Power Rectifier 50A 300V |
Motorola |
| 276 |
MR813 |
Fast Recovery Power Rectifier 1A 300V |
Motorola |
| 277 |
MUR130 |
1A 300V Ultrafast Rectifier |
ON Semiconductor |
| 278 |
MUR130RL |
1A 300V Ultrafast Rectifier |
ON Semiconductor |
| 279 |
NOIL1SM0300A |
LUPA 300 VGA CMOS Image Sensor |
ON Semiconductor |
| 280 |
PB-IRF6611 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 281 |
PB-IRF6612 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes. |
International Rectifier |
| 282 |
PB-IRF6617 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes. |
International Rectifier |
| 283 |
PB-IRF6618 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 284 |
PB-IRF6621 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
| 285 |
PB-IRF6626 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 72 amperes. |
International Rectifier |
| 286 |
PB-IRF6631 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 57 amperes. |
International Rectifier |
| 287 |
PB-IRF6635 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 288 |
PB-IRF6637 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 52 amperes. |
International Rectifier |
| 289 |
PB-IRF6638 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes. |
International Rectifier |
| 290 |
PB-IRF6678 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 291 |
PIIPM30P06D009 |
Programmable isolated intelligent power module, a 30A, 600V, three-phase inverter for 15kW industrial and servo motors with on-board |
International Rectifier |
| 292 |
RA0320 |
20A 30V Silicon Rectifier Diode |
IPRS Baneasa |
| 293 |
RA0320R |
20A 30V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 294 |
SF10F12 |
Silicon alloy-diffused junction thyristor 10A 300V |
TOSHIBA |
| 295 |
SF16F12 |
Silicon alloy-diffused junction thyristor 16A 300V |
TOSHIBA |
| 296 |
SF1F11 |
Silicon diffused junction thyristor 1.0A 300V |
TOSHIBA |
| 297 |
SF1F11A |
Silicon diffused junction thyristor 1.0A 300V |
TOSHIBA |
| 298 |
SF30F11 |
Silicon diffused junction thyristor 30A 300V |
TOSHIBA |
| 299 |
SF5F12 |
Silicon diffused junction thyristor 5A 300V |
TOSHIBA |
| 300 |
SH150F11 |
Silicon alloy-diffused junction high speed thyristor 150A 300V |
TOSHIBA |
| | | |
