No. |
Part Name |
Description |
Manufacturer |
271 |
25TTS12 |
1200V 16A Phase Control SCR in a TO-220 package |
International Rectifier |
272 |
25TTS12FP |
1200V 16A Phase Control SCR in a TO-220 Full-Pak package |
International Rectifier |
273 |
25TTS16 |
1600V 16A Phase Control SCR in a TO-220 package |
International Rectifier |
274 |
25TTS16FP |
1600V 16A Phase Control SCR in a TO-220 Full-Pak package |
International Rectifier |
275 |
2N1141 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
276 |
2N1142 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
277 |
2N1143 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
278 |
2N1195 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
279 |
2N1204 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
280 |
2N1204A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
281 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
282 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
283 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
284 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
285 |
2N1561 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
286 |
2N1562 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
287 |
2N1595 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
288 |
2N1596 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
289 |
2N1597 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
290 |
2N1598 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
291 |
2N1599 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
292 |
2N1692 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
293 |
2N1693 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
294 |
2N1802 |
800V 70A Phase Control SCR in a TO-208AD (TO-83) package |
International Rectifier |
295 |
2N1803 |
900V 70A Phase Control SCR in a TO-208AD (TO-83) package |
International Rectifier |
296 |
2N1804 |
1000V 70A Phase Control SCR in a TO-208AD (TO-83) package |
International Rectifier |
297 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
298 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
299 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
300 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
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