| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2SA1386A |
Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
Sanken |
| 272 |
2SA1386A |
Silicon PNP Power Transistors TO-3PN package |
Savantic |
| 273 |
2SA1387 |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
| 274 |
2SA1388 |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
| 275 |
2SA1388 |
2SA1388 |
TOSHIBA |
| 276 |
2SA1388 |
2SA1388 |
TOSHIBA |
| 277 |
2SA1389 |
Silicon PNP Power Transistors MT-200 package |
Savantic |
| 278 |
2SA1390 |
Silicon PNP Transistor |
Hitachi Semiconductor |
| 279 |
2SA1390 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 280 |
2SA1390 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 281 |
2SA1391 |
Low-Noise AF Amp Applications |
SANYO |
| 282 |
2SA1392 |
PNP/NPN Epitaxial Planar Silicon Transistors AF Amp Applications |
SANYO |
| 283 |
2SA1394 |
PNP SILICON POWER TRANSISTOR |
NEC |
| 284 |
2SA1395 |
Silicon transistor |
NEC |
| 285 |
2SA1396 |
PNP SILICON POWER TRANSISTOR |
NEC |
| 286 |
2SA1396 |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
| 287 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 288 |
2SA1399 |
SILICON PNP TRANSISTOR |
Isahaya Electronics Corporation |
| 289 |
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 |
Isahaya Electronics Corporation |
| 290 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
| 291 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
| 292 |
30KPA130 |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 293 |
30KPA130A |
Diode TVS Single Uni-Dir 130V 30KW 2-Pin |
New Jersey Semiconductor |
| 294 |
30KPA130C |
Diode TVS Single Uni-Dir 130V 30KW 2-Pin |
New Jersey Semiconductor |
| 295 |
30KPA130CA |
Diode |
New Jersey Semiconductor |
| 296 |
30KPA132 |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 297 |
30KPA132A |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 298 |
30KPA132Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 299 |
30KPA132C |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 300 |
30KPA132CA |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
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