| No. |
Part Name |
Description |
Manufacturer |
| 271 |
ESJA59-12A |
High Voltage Silicon Diode |
Fuji Electric |
| 272 |
ESJA59-14A |
High Voltage Silicon Diode |
Fuji Electric |
| 273 |
FDA59N25 |
N-Channel UniFETTM MOSFET 250V, 59A, 49m? |
Fairchild Semiconductor |
| 274 |
FDA59N30 |
N-Channel UniFETTM MOSFET 300V, 59A, 56m? |
Fairchild Semiconductor |
| 275 |
IA59032 |
32-Bit High Speed Microprocessor Slice |
innovASIC |
| 276 |
IA59032-CPGA100I |
32-Bit High Speed Microprocessor Slice |
innovASIC |
| 277 |
IRHNA593064 |
-60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 278 |
IRHNA593064SCS |
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 279 |
IRHNA593160 |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 280 |
IRHNA593160SCS |
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 281 |
IRHNA593260 |
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 282 |
IRHNA593260SCS |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 283 |
IRHNA597064 |
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 284 |
IRHNA597064SCS |
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 285 |
IRHNA597160 |
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 286 |
IRHNA597260 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 287 |
IRHNA597Z60 |
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 288 |
IRHNA597Z60SCS |
-30V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
International Rectifier |
| 289 |
MSA5960C |
0.5 INCH (12.7MM) 16 SEGMENT, SINGLE DIGIT ALPHA - NUMERIC STICK DISPLAY |
Fairchild Semiconductor |
| 290 |
MSA5980C |
0.5 INCH (12.7MM) 16 SEGMENT, SINGLE DIGIT ALPHA - NUMERIC STICK DISPLAY |
Fairchild Semiconductor |
| 291 |
NSA5917 |
0.5 inch 5 digit numeric displays |
National Semiconductor |
| 292 |
NSA5921 |
0.5 inch 5 digit numeric displays |
National Semiconductor |
| 293 |
NSA5922 |
0.5 inch 5 digit numeric displays |
National Semiconductor |
| 294 |
NX8563LA597-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. SC-UPC. |
NEC |
| 295 |
NX8563LA597-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 240 km (4320 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. SC-APC. |
NEC |
| 296 |
NX8567SA593-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1559.389 nm. Frequency 192.25 THz. FC-UPC connector. |
NEC |
| 297 |
NX8567SA593-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1559.389 nm. Frequency 192.25 THz. SC-UPC connector. |
NEC |
| 298 |
NX8567SA597-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1559.794 nm. Frequency 192.20 THz. FC-UPC connector. |
NEC |
| 299 |
NX8567SA597-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1559.794 nm. Frequency 192.20 THz. SC-UPC connector. |
NEC |
| 300 |
PSMA5925B |
Voltage regulator diodes |
Philips |
| | | |
