| No. |
Part Name |
Description |
Manufacturer |
| 271 |
5962P0053604QXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 272 |
5962P0053604TUA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 273 |
5962P0053604TUC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 274 |
5962P0053604TUX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 275 |
5962P0053604TXA |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 276 |
5962P0053604TXC |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 277 |
5962P0053604TXX |
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 278 |
5962P0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 279 |
5962P0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 280 |
5962P0153301QXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 281 |
5962P0153301TXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 282 |
61LV25616AL |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 283 |
62LV1024SC |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
| 284 |
62LV256SC |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
| 285 |
62WV12816EC |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
| 286 |
62WV12816EI |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
| 287 |
65040 |
Double-Ended Shear Beam Load Cell |
Vishay |
| 288 |
6BK4A |
Beam Triode |
etc |
| 289 |
6BK4B |
Beam Triode |
etc |
| 290 |
6N-60 |
7 x 5 mm SMD Seam Cxo Tyoe / 6N Series |
TXC |
| 291 |
7025ERPQB35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 292 |
7025ERPQB45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 293 |
7025ERPQE35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 294 |
7025ERPQE45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 295 |
7025ERPQI35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 296 |
7025ERPQI45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 297 |
7025ERPQS35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 298 |
7025ERPQS45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 299 |
71V016SA |
3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) |
IDT |
| 300 |
73S1210F-EB-LITEMS |
73S1210F Multi-SAM Evaluation Board Lite |
MAXIM - Dallas Semiconductor |
| | | |
