No. |
Part Name |
Description |
Manufacturer |
271 |
AD8652 |
50 MHz, Precision, Low Distortion, Low Noise CMOS Amplifiers Preliminary Technical Data |
Analog Devices |
272 |
AD8652ARMZ-R2 |
50 MHz, Precision, Low Distortion, Low Noise CMOS Amplifiers Preliminary Technical Data |
Analog Devices |
273 |
AD8652ARMZ-REEL |
50 MHz, Precision, Low Distortion, Low Noise CMOS Amplifiers Preliminary Technical Data |
Analog Devices |
274 |
AD8652ARZ |
50 MHz, Precision, Low Distortion, Low Noise CMOS Amplifiers Preliminary Technical Data |
Analog Devices |
275 |
AD8652ARZ-REEL |
50 MHz, Precision, Low Distortion, Low Noise CMOS Amplifiers Preliminary Technical Data |
Analog Devices |
276 |
AD8652ARZ-REEL7 |
50 MHz, Precision, Low Distortion, Low Noise CMOS Amplifiers Preliminary Technical Data |
Analog Devices |
277 |
ADA4891-2 |
Low Cost CMOS, High Speed, Rail-to-Rail Amplifiers (Dual) |
Analog Devices |
278 |
ADRF6518 |
1100 MHz Variable Gain Amplifiers and Baseband Programmable Filters |
Analog Devices |
279 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
280 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
281 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
282 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
283 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
284 |
AGB3300 |
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ... |
Anadigics Inc |
285 |
AGB3301 |
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ... |
Anadigics Inc |
286 |
AGB3302 |
The AGB3302 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
287 |
AGB3303 |
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
288 |
AGB3306 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
289 |
AGB3307 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
290 |
AML052PNA1711 |
Amplifiers (Low Phase Noise) |
Microsemi |
291 |
AML1820L3601 |
Amplifiers (Equalizer) |
Microsemi |
292 |
AN-3764 |
Microwave Amplifiers and Oscillators Using the RCA-2N5470 Power Transistor - Application Note |
RCA Solid State |
293 |
AN-403 |
Single power supply operation of I/C operational amplifiers - Application Note |
Motorola |
294 |
AN-438 |
Analysis and design of active filters using operational amplifiers - Application Note |
Motorola |
295 |
AN-4421 |
16- and 25-Watt Broadband Power Amplifiers Using RCA-2N5918, 2N5919, and 2N6105 UHF/Microwave Power Transistors - Application Note |
RCA Solid State |
296 |
AN-480 |
Regulators using operational amplifiers - Application Note |
Motorola |
297 |
AN-593 |
Application Note - Broadband linear power amplifiers using PUSH-PULL transistors |
Motorola |
298 |
AN-6118 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
299 |
AN-6126 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
300 |
AN-6307 |
Microwave Amplifiers and Oscillators using RCA3000-Series Transistors - Application Note |
RCA Solid State |
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