| No. |
Part Name |
Description |
Manufacturer |
| 271 |
DS1330AB-100 |
100 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
| 272 |
DS1330AB-100-IND |
100 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
| 273 |
DS1345AB-100 |
1024k Nonvolatile SRAM with Battery Monitor |
MAXIM - Dallas Semiconductor |
| 274 |
DS1350AB-100 |
4096k Nonvolatile SRAM with Battery Monitor |
MAXIM - Dallas Semiconductor |
| 275 |
DS1836B-10+ |
3.3V/5V MicroManager |
MAXIM - Dallas Semiconductor |
| 276 |
DS1855B-100 |
Dual Nonvolatile Digital Potentiometer and Secure Memory |
MAXIM - Dallas Semiconductor |
| 277 |
DS2030AB-100 |
100 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
| 278 |
DS2030AB-100# |
Single-Piece 256kb Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
| 279 |
DS2045AB-100 |
100 ns, 4.75 to 5.25 V, rechargeable 1M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
| 280 |
DS2045AB-100# |
Single-Piece 1Mb Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
| 281 |
EB-109 |
Application Note - Low cost UHF device gives broadband performance at 3.0 watts output |
Motorola |
| 282 |
EFA060BB-100F |
8-12V low distortion GaAs power FET |
Excelics Semiconductor |
| 283 |
EFA120B-100F |
8-12V low distortion GaAs power FET |
Excelics Semiconductor |
| 284 |
EFA240B-100F |
8-12V low distortion GaAs power FET |
Excelics Semiconductor |
| 285 |
EFC120B-100F |
Low Distortion GaAs Power FET |
Excelics Semiconductor |
| 286 |
EFC240B-100F |
10-14V low distortion GaAs power FET |
Excelics Semiconductor |
| 287 |
EM128C08B-10 |
128Kx8 Bit Ultra-Low Power Asynchronous Static RAM |
etc |
| 288 |
EPA120B-100F |
8-12V high efficiency heterojunction power FET |
Excelics Semiconductor |
| 289 |
EPA160B-100F |
8-12V high efficiency heterojunction power FET |
Excelics Semiconductor |
| 290 |
EPA240B-100F |
8-12V high efficiency heterojunction power FET |
Excelics Semiconductor |
| 291 |
ESM227 |
Speed regulator integrated circuit, CB-108 case |
SESCOSEM |
| 292 |
FAR-C1CB-10000-G01-R |
Piezoelectric resonator |
Fujitsu Microelectronics |
| 293 |
FAR-C1CB-10000-J01-R |
Piezoelectric resonator |
Fujitsu Microelectronics |
| 294 |
FAR-C1CB-10000-K01-R |
Piezoelectric resonator |
Fujitsu Microelectronics |
| 295 |
FAR-C1CB-10000-M01-R |
Piezoelectric resonator |
Fujitsu Microelectronics |
| 296 |
FAR-C1SB-10000-G01-T |
Piezoelectric resonator |
Fujitsu Microelectronics |
| 297 |
FAR-C1SB-10000-G01-U |
Piezoelectric resonator |
Fujitsu Microelectronics |
| 298 |
FAR-C1SB-10000-J01-T |
Piezoelectric resonator |
Fujitsu Microelectronics |
| 299 |
FAR-C1SB-10000-J01-U |
Piezoelectric resonator |
Fujitsu Microelectronics |
| 300 |
FAR-C1SB-10000-K01-T |
Piezoelectric resonator |
Fujitsu Microelectronics |
| | | |
