| No. |
Part Name |
Description |
Manufacturer |
| 271 |
BAT17WS |
SCHOTTKY DIODES |
General Semiconductor |
| 272 |
BAT17WS |
Schottky Diodes |
Vishay |
| 273 |
BAT18 |
Switching Diode, marking A2 |
CCSIT-CE |
| 274 |
BAT18 |
Silicon RF Switching Diode |
Infineon |
| 275 |
BAT18 |
Band-switching diode |
NXP Semiconductors |
| 276 |
BAT18 |
Band-switching diode |
Philips |
| 277 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 278 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 279 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 280 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 281 |
BAT18-04 |
PIN Diodes - Low loss Switch |
Infineon |
| 282 |
BAT18-04 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 283 |
BAT18-05 |
PIN Diodes - Low loss Switch |
Infineon |
| 284 |
BAT18-05 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 285 |
BAT18-06 |
Silicon RF Switching Diode |
Infineon |
| 286 |
BAT18-06 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 287 |
BAT19 |
Diode Schottky 10V 0.03A 2-Pin DO-35 |
New Jersey Semiconductor |
| 288 |
CDBAT1100-HF |
Halogen Free Schottky Barrier Diodes, VRRM=100V, VR=100V, IO=1A |
Comchip Technology |
| 289 |
CDBAT120-HF |
Halogen Free Schottky Barrier Diodes, VRRM=20V, VR=20V, IO=1A |
Comchip Technology |
| 290 |
CDBAT140-HF |
Halogen Free Schottky Barrier Diodes, VRRM=40V, VR=40V, IO=1A |
Comchip Technology |
| 291 |
CDBAT160-HF |
Halogen Free Schottky Barrier Diodes, VRRM=60V, VR=60V, IO=1A |
Comchip Technology |
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