No. |
Part Name |
Description |
Manufacturer |
271 |
HYB25D256400BT-7 |
DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3) |
Infineon |
272 |
HYB25D256400BT-7F |
DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2) |
Infineon |
273 |
HYB25D256800BT-7 |
256 Mbit Double Data Rate SDRAM |
Infineon |
274 |
HYB25D256800BT-7F |
256 Mbit Double Data Rate SDRAM |
Infineon |
275 |
HYB25D512400BT-7 |
512Mbit Double Data Rate SDRAM |
Infineon |
276 |
HYB3116400BT-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
277 |
HYB3116405BT-70 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
278 |
HYB3117400BT-70 |
3.3V 4M x 4-Bit Dynamic RAM |
Siemens |
279 |
HYB3117405BT-70 |
3.3V 4M x 4-Bit EDO-Dynamic RAM |
Siemens |
280 |
HYB39S64160BT-7 |
64M SDRAM Component |
Infineon |
281 |
HYB39S64160BT-7,5 |
64M SDRAM Component |
Infineon |
282 |
HYB39S64160BT-7.5 |
64-MBit Synchronous DRAM |
Infineon |
283 |
HYB39S64400BT-7.5 |
64M SDRAM Component |
Infineon |
284 |
HYB39S64800BT-7.5 |
64M SDRAM Component |
Infineon |
285 |
HYB5116400BT-70 |
4M x 4-Bit Dynamic RAM |
Siemens |
286 |
HYB5116405BT-70 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
287 |
HYB5116405BT-700 |
4M x 4bit DRAM |
Siemens |
288 |
HYB5117400BT-70 |
4M x 4-Bit Dynamic RAM |
Siemens |
289 |
HYB5117400BT-700 |
4M x 4bit DRAM |
Siemens |
290 |
HYB5117405BT-70 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
291 |
HYB5117405BT-700 |
4M x 4bit DRAM |
Siemens |
292 |
HYB514400BT-70 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
293 |
KM416C1000BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
294 |
KM416C1004BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
295 |
KM416C1200BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
296 |
KM416C1204BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
297 |
KM416V1000BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
298 |
KM416V1004BT-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
299 |
KM416V1200BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
300 |
KM416V1204BT-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
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