No. |
Part Name |
Description |
Manufacturer |
271 |
MPC93R51D |
LOW VOLTAGE PLL CLOCK DRIVER |
Motorola |
272 |
MPC93R52 |
Low Voltage LVCMOS 1:11 Clock Driver |
Freescale (Motorola) |
273 |
MPC93R52 |
3.3V/2.5V 1:11 LVCMOS Zero Delay Clock Generator |
Motorola |
274 |
MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers |
Motorola |
275 |
MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers |
Motorola |
276 |
MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers |
Motorola |
277 |
MWIC930GR1 |
N–CDMA, W–CDMA, GSM/GSM EDGE 746–960 MHz, 30 W, 26–28 V RF LDMOS Integrated Power Amplifier |
Freescale (Motorola) |
278 |
MWIC930GR1 |
RF LDMOS Wideband Integrated Power Amplifiers |
Motorola |
279 |
MWIC930R1 |
N–CDMA, W–CDMA, GSM/GSM EDGE 746–960 MHz, 30 W, 26–28 V RF LDMOS Integrated Power Amplifier |
Freescale (Motorola) |
280 |
MWIC930R1 |
RF LDMOS Wideband Integrated Power Amplifiers |
Motorola |
281 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
282 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
283 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
284 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
285 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
286 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
287 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
288 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
289 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
290 |
NMC9307N |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
291 |
NMC9313B |
5V, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
292 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
293 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
294 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
295 |
NMC9346EN |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
296 |
NMC9346MB |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
297 |
NMC9346N |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
298 |
NMC93C56 |
Electrically Erasable Programmable Memories |
National Semiconductor |
299 |
NX8570SC933D-BA |
4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). FC-PC connector. |
NEC |
300 |
NX8570SC933D-CA |
4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). SC-PC connector. |
NEC |
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