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Datasheets for CARB

Datasheets found :: 307
Page: | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
271 STPSC6H12 1200 V power Schottky silicon carbide diode ST Microelectronics
272 STPSC6H12B-TR1 1200 V power Schottky silicon carbide diode ST Microelectronics
273 STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series ST Microelectronics
274 STPSC806 600 V power Schottky silicon carbide diode ST Microelectronics
275 STPSC806D 600 V power Schottky silicon carbide diode ST Microelectronics
276 STPSC806G-TR 600 V power Schottky silicon carbide diode ST Microelectronics
277 STPSC8H065 650 V power Schottky silicon carbide diode ST Microelectronics
278 STPSC8H065B-TR 650 V power Schottky silicon carbide diode ST Microelectronics
279 STPSC8H065C 650 V power Schottky silicon carbide diode ST Microelectronics
280 STPSC8H065CT 650 V power Schottky silicon carbide diode ST Microelectronics
281 STPSC8H065D 650 V power Schottky silicon carbide diode ST Microelectronics
282 STPSC8H065DI 650 V power Schottky silicon carbide diode ST Microelectronics
283 STPSC8H065G-TR 650 V power Schottky silicon carbide diode ST Microelectronics
284 STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series ST Microelectronics
285 UPSC100 Silicon Carbide (SiC) Schottky Microsemi
286 UPSC200 Silicon Carbide (SiC) Schottky Microsemi
287 UPSC203 Silicon Carbide (SiC) Schottky Microsemi
288 UPSC400 Silicon Carbide (SiC) Schottky Microsemi
289 UPSC403 Silicon Carbide (SiC) Schottky Microsemi
290 UPSC600 Silicon Carbide (SiC) Schottky Microsemi
291 UPSC603 Silicon Carbide (SiC) Schottky Microsemi
292 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
293 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
294 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
295 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
296 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
297 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
298 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
299 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
300 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 307
Page: | 6 | 7 | 8 | 9 | 10 | 11 |



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