No. |
Part Name |
Description |
Manufacturer |
271 |
STPSC6H12 |
1200 V power Schottky silicon carbide diode |
ST Microelectronics |
272 |
STPSC6H12B-TR1 |
1200 V power Schottky silicon carbide diode |
ST Microelectronics |
273 |
STPSC6TH13TI |
Dual 650 V power Schottky silicon carbide diode in series |
ST Microelectronics |
274 |
STPSC806 |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
275 |
STPSC806D |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
276 |
STPSC806G-TR |
600 V power Schottky silicon carbide diode |
ST Microelectronics |
277 |
STPSC8H065 |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
278 |
STPSC8H065B-TR |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
279 |
STPSC8H065C |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
280 |
STPSC8H065CT |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
281 |
STPSC8H065D |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
282 |
STPSC8H065DI |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
283 |
STPSC8H065G-TR |
650 V power Schottky silicon carbide diode |
ST Microelectronics |
284 |
STPSC8TH13TI |
Dual 650 V power Schottky silicon carbide diode in series |
ST Microelectronics |
285 |
UPSC100 |
Silicon Carbide (SiC) Schottky |
Microsemi |
286 |
UPSC200 |
Silicon Carbide (SiC) Schottky |
Microsemi |
287 |
UPSC203 |
Silicon Carbide (SiC) Schottky |
Microsemi |
288 |
UPSC400 |
Silicon Carbide (SiC) Schottky |
Microsemi |
289 |
UPSC403 |
Silicon Carbide (SiC) Schottky |
Microsemi |
290 |
UPSC600 |
Silicon Carbide (SiC) Schottky |
Microsemi |
291 |
UPSC603 |
Silicon Carbide (SiC) Schottky |
Microsemi |
292 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
293 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
294 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
295 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
296 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
297 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
298 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
299 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
300 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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