| No. |
Part Name |
Description |
Manufacturer |
| 271 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 272 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 273 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 274 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 275 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 276 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 277 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 278 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 279 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 280 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 281 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 282 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 283 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 284 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 285 |
2-BDY20 |
N-P-N Silicon Diffused Power Transistor |
Mullard |
| 286 |
2-BDY38 |
N-P-N Silicon Diffused Power Transistor |
Mullard |
| 287 |
2045A |
CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES |
Texas Instruments |
| 288 |
2090 |
Two-Way Isolated Power Dividers Tapered, Ultra Broadband |
Tyco Electronics |
| 289 |
2090-6204-00 |
0.5-18 GHz, Two-way isolated power divider tapere, ultra broadband |
MA-Com |
| 290 |
2090-6204-00 |
Two-Way Isolated Power Dividers Tapered, Ultra Broadband |
Tyco Electronics |
| 291 |
2090-6205-00 |
2-18 GHz, Two-way isolated power divider tapere, ultra broadband |
MA-Com |
| 292 |
2090-6205-00 |
Two-Way Isolated Power Dividers Tapered, Ultra Broadband |
Tyco Electronics |
| 293 |
2090-6210-00 |
8-18 GHz, Two-way isolated power divider tapere, ultra broadband |
MA-Com |
| 294 |
2090-6210-00 |
Two-Way Isolated Power Dividers Tapered, Ultra Broadband |
Tyco Electronics |
| 295 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
| 296 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria |
Microchip |
| 297 |
2729-125 |
Pulsed Power S-Band (Si) |
Microsemi |
| 298 |
2729-170 |
Pulsed Power S-Band (Si) |
Microsemi |
| 299 |
2729-300P |
Pulsed Power S-Band (Si) |
Microsemi |
| 300 |
2731-100M |
Pulsed Power S-Band (Si) |
Microsemi |
| | | |
