No. |
Part Name |
Description |
Manufacturer |
271 |
1N1835R |
Diffused silicon power zener diodes 10W 82V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
272 |
1N1835RA |
Diffused silicon power zener diodes 10W 82V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
273 |
1N1836 |
Diffused silicon power zener diodes 10W 91V |
Texas Instruments |
274 |
1N1836A |
Diffused silicon power zener diodes 10W 91V ±5% tolerance |
Texas Instruments |
275 |
1N1836C |
Diffused silicon power zener diodes 10W 91V, Double anode |
Texas Instruments |
276 |
1N1836R |
Diffused silicon power zener diodes 10W 91V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
277 |
1N1836RA |
Diffused silicon power zener diodes 10W 91V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
278 |
1N251 |
Glass passivated silicon switching diode (marking with color rings red, green, brown) |
Texas Instruments |
279 |
1N3062 |
Leaded Silicon Diode Switching |
Central Semiconductor |
280 |
1N3063 |
Leaded Silicon Diode Switching |
Central Semiconductor |
281 |
1N3063 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
282 |
1N3064 |
Leaded Silicon Diode Switching |
Central Semiconductor |
283 |
1N3070 |
Leaded Silicon Diode Switching |
Central Semiconductor |
284 |
1N3070 |
Glass passivated silicon diode |
Texas Instruments |
285 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
286 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
287 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
288 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
289 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
290 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
291 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
292 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
293 |
1N3208R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
294 |
1N3209R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
295 |
1N3210R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
296 |
1N3212R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
297 |
1N3213R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
298 |
1N3595 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
299 |
1N3600 |
Leaded Silicon Diode Switching |
Central Semiconductor |
300 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
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