| No. |
Part Name |
Description |
Manufacturer |
| 271 |
1N1836A |
Diffused silicon power zener diodes 10W 91V ±5% tolerance |
Texas Instruments |
| 272 |
1N1836C |
Diffused silicon power zener diodes 10W 91V, Double anode |
Texas Instruments |
| 273 |
1N1836R |
Diffused silicon power zener diodes 10W 91V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
| 274 |
1N1836RA |
Diffused silicon power zener diodes 10W 91V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
| 275 |
1N251 |
Glass passivated silicon switching diode (marking with color rings red, green, brown) |
Texas Instruments |
| 276 |
1N3062 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 277 |
1N3063 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 278 |
1N3063 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 279 |
1N3064 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 280 |
1N3070 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 281 |
1N3070 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 282 |
1N3070 |
Glass passivated silicon diode |
Texas Instruments |
| 283 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
| 284 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
| 285 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
| 286 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
| 287 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
| 288 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
| 289 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
| 290 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
| 291 |
1N3208R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 292 |
1N3209R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 293 |
1N3210R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 294 |
1N3212R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 295 |
1N3213R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
| 296 |
1N3595 |
Leaded Silicon Diode General Purpose |
Central Semiconductor |
| 297 |
1N3600 |
Leaded Silicon Diode Switching |
Central Semiconductor |
| 298 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 299 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 300 |
1N3675 |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
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