| No. |
Part Name |
Description |
Manufacturer |
| 271 |
269-B-280-14XX-B |
Pump laser module with fiber grating. Available with fiber grating for wavelength stability (1420 nm - 1510 nm). Operatig power 280 mW. Nonisolated,PMF. Connector SC/APC. |
Agere Systems |
| 272 |
269-B-280-14XX-B |
Pump laser module with fiber grating. Available with fiber grating for wavelength stability (1420 nm - 1510 nm). Operatig power 280 mW. Nonisolated,PMF. Connector SC/APC. |
Agere Systems |
| 273 |
269-B-280-14XX-C |
Pump laser module with fiber grating. Available with fiber grating for wavelength stability (1420 nm - 1510 nm). Operatig power 280 mW. Nonisolated,RMF. Connector FC/APC. |
Agere Systems |
| 274 |
269-B-280-14XX-C |
Pump laser module with fiber grating. Available with fiber grating for wavelength stability (1420 nm - 1510 nm). Operatig power 280 mW. Nonisolated,RMF. Connector FC/APC. |
Agere Systems |
| 275 |
2N2095 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 276 |
2N2098 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 277 |
2N2708 |
NPN transistor RF/IF Amplifier, high power gain, low capacitance |
Amelco Semiconductor |
| 278 |
2N2962 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 279 |
2N2963 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 280 |
2N2964 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 281 |
2N2965 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 282 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 283 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 284 |
2N5220 |
Low-Power general purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 285 |
2N5221 |
Low-Power General purpose PNP silicon amplifier transistor |
ITT Semiconductors |
| 286 |
2N5460 |
Amplifier General Purpose |
Vishay |
| 287 |
2N5461 |
Amplifier General Purpose |
Vishay |
| 288 |
2N5462 |
Amplifier General Purpose |
Vishay |
| 289 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 290 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 291 |
2SB1407(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 292 |
2SB1407(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 293 |
2SB1409(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 294 |
2SB1409(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 295 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 296 |
2SD2121(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 297 |
2SD2121(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 298 |
2SD2122(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 299 |
2SD2122(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| 300 |
2SD2123(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
| | | |
