No. |
Part Name |
Description |
Manufacturer |
271 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
272 |
1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor |
GHz Technology |
273 |
132-Z |
MOS Field Effect Power Transistors |
Unknow |
274 |
133-Z |
MOS Field Effect Power Transistors |
Unknow |
275 |
1417K5A |
NetLight 1417K5A 2.5 Gbits/s 1300 nm Laser Transceiver with Clock and Data Recovery |
Agere Systems |
276 |
1417K6S |
NetLight 1417K6S 2.5 Gbits/s 1300 nm Laser Transceiver |
Agere Systems |
277 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
278 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
279 |
15KE |
1500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS |
Bytes |
280 |
15KE68CA |
1500 Watt Mosorb Zener Transient Voltage Suppressors |
ON Semiconductor |
281 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
282 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
283 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
284 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
285 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
286 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
287 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
288 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
289 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
290 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
291 |
183T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
292 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
293 |
185T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
294 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
295 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
296 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
297 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
298 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
299 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
300 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
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