| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N4979 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 272 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
| 273 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 274 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 275 |
2N5321 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 276 |
2N5323 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 277 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 278 |
2N5415 |
PNP switching transistor - metal case, high power |
IPRS Baneasa |
| 279 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 280 |
2N5416 |
PNP switching transistor - metal case, high power |
IPRS Baneasa |
| 281 |
2N5432 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 282 |
2N5433 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 283 |
2N5434 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 284 |
2N5575 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 285 |
2N5576 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 286 |
2N5577 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 287 |
2N5578 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 288 |
2N5579 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 289 |
2N5580 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 290 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 291 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 292 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 293 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 294 |
2N5871 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 295 |
2N5871/1 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 296 |
2N5871/2 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 297 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 298 |
2N5872A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 299 |
2N5872B |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 300 |
2N5873 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
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