| No. |
Part Name |
Description |
Manufacturer |
| 271 |
1N6090 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 272 |
1N6091 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 273 |
1N914UR |
PERFORMANCE SPECIFICATION |
Microsemi |
| 274 |
1S20 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 275 |
1S30 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 276 |
1S40 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 277 |
1S50 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 278 |
1S60 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 279 |
2,125AND1,0625GBD,LC,2X5 |
Transceivers by Form-factor MSA - Multimode 850nm VCSEL TRX |
Infineon |
| 280 |
2.125AND1.0625GBD,LC,SFP, |
Transceivers by Form-factor MSA - SFP - Multimode 850nm VCSEL; 2.125 and 1.0625 Gbit/s FC; 1.25 GBE TRX with LC-Connector |
Infineon |
| 281 |
200 SERIES |
Conformal Coated |
Vishay |
| 282 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
| 283 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 284 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 285 |
20PMT03 |
10/100 Base TX Transformer Designed for general Chipsets |
YCL |
| 286 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 287 |
22V10 |
HighPerformanceE2CMOSPLDGenericArrayLogic |
Lattice Semiconductor |
| 288 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
| 289 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
| 290 |
26CV12 |
HighPerformanceE2CMOSPLDGenericArrayLogic |
Lattice Semiconductor |
| 291 |
27C010 |
1 /048 /576-Bit (128K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 292 |
27C040 |
4 /194 /304-Bit 512K x 8 High Performance CMOS EPROM |
Fairchild Semiconductor |
| 293 |
281 |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 294 |
284J |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 295 |
286J |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 296 |
29F010 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory |
Advanced Micro Devices |
| 297 |
29F010 |
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
| 298 |
29F010 |
1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory |
ST Microelectronics |
| 299 |
29F040 |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory |
Advanced Micro Devices |
| 300 |
29F040 |
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
SGS Thomson Microelectronics |
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