| No. |
Part Name |
Description |
Manufacturer |
| 271 |
2N6488 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 272 |
2N6488 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 273 |
2N6490 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 274 |
2N6490 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 275 |
2N6546 |
MULTIEPITAXIAL MESA NPN |
SGS Thomson Microelectronics |
| 276 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 277 |
2N6668 |
SILICON PNP POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
| 278 |
2N6668 |
SILICON PNP POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
| 279 |
2N720A |
HIGH VOLTAGE GENERAL PURPOSE |
SGS Thomson Microelectronics |
| 280 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 281 |
2N930 |
TRANSISTOR |
SGS Thomson Microelectronics |
| 282 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
| 283 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 284 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 285 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 286 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 287 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 288 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 289 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 290 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 291 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 292 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 293 |
4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
| 294 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 295 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 296 |
4027 |
DUAL-J-K MASTER-SLAVE FLIP-FLOP |
SGS Thomson Microelectronics |
| 297 |
405 |
NPN Silicon RF Transistor |
SGS Thomson Microelectronics |
| 298 |
4066 |
QUAD BILATERAL SWITCH FOR TRANSMISSION OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS |
SGS Thomson Microelectronics |
| 299 |
420 |
NPN Silicon RF Transistor |
SGS Thomson Microelectronics |
| 300 |
486DX-CORE |
FULLY STATIC 3.3V 486 ASIC CORE |
SGS Thomson Microelectronics |
| | | |
