| No. |
Part Name |
Description |
Manufacturer |
| 271 |
FU-319SPP-C6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 272 |
FU-319SPP-CV6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 273 |
G5851-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 274 |
G5851-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 275 |
G5851-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 276 |
G5851-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 277 |
G5851-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 278 |
G5851-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 279 |
G5852-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 280 |
G5852-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 281 |
G5852-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 282 |
G5852-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 283 |
G5852-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 284 |
G5852-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 285 |
G5853-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 286 |
G5853-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 287 |
G5853-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 288 |
G5853-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 289 |
G5853-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 290 |
G5853-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 291 |
G6742 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 292 |
G6742-003 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 293 |
G6742-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 294 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 295 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 296 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 297 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 298 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
| 299 |
G7151-16 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 300 |
G7871 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
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