| No. |
Part Name |
Description |
Manufacturer |
| 271 |
BAY66 |
Silicon power varactor diode for frequency multipliers up to 1 GHz |
VALVO |
| 272 |
BAY96 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to approx. 500 MHz |
VALVO |
| 273 |
BXY27 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band and input powers up to 10W |
Mullard |
| 274 |
BXY27 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to S-band |
VALVO |
| 275 |
BXY28 |
Silicon planar epitaxial varactor diode for use in high C efficiency multipliers in the 2-4 GHz range |
Mullard |
| 276 |
BXY28 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to C-band |
VALVO |
| 277 |
BXY29 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to the X-band |
VALVO |
| 278 |
BXY32 |
Silicon planar step recovery diode for high order frequency multipliers with outputs in X band |
Mullard |
| 279 |
BXY32 |
Silicon planar epitaxial varactor diode for frequency multipliers up to the X-band |
VALVO |
| 280 |
BXY35 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
| 281 |
BXY36 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
| 282 |
BXY37 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
| 283 |
BXY38 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
| 284 |
BXY39 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
| 285 |
BXY40 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
| 286 |
BXY41 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
| 287 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 288 |
CPMC1300 |
Channel Photomultipliers Overview and Specifications |
PerkinElmer Optoelectronics |
| 289 |
CRS080G40 |
8 kV, CRT power supply |
Voltage Multipliers |
| 290 |
CRS120G40 |
12 kV, CRT power supply |
Voltage Multipliers |
| 291 |
CSD05120A |
1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, high voltage multipliers |
CREE POWER |
| 292 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
| 293 |
CXY12 |
Gallium arsenide diode with a high cut-off frequency for use in frequency multipliers up to Q-Band |
Mullard |
| 294 |
DM7875A |
DM7875A/DM8875A, DM7875B/DM8875B TRI-STATE 4-Bit Parallel Binary Multipliers |
National Semiconductor |
| 295 |
DM7875AJ |
DM7875A/DM8875A, DM7875B/DM8875B TRI-STATE 4-Bit Parallel Binary Multipliers |
National Semiconductor |
| 296 |
DM7875BJ |
DM7875A/DM8875A, DM7875B/DM8875B TRI-STATE 4-Bit Parallel Binary Multipliers |
National Semiconductor |
| 297 |
DM8875AN |
DM7875A/DM8875A, DM7875B/DM8875B TRI-STATE 4-Bit Parallel Binary Multipliers |
National Semiconductor |
| 298 |
DM8875BN |
DM7875A/DM8875A, DM7875B/DM8875B TRI-STATE 4-Bit Parallel Binary Multipliers |
National Semiconductor |
| 299 |
FP100F |
10000 V rectifier stack 2.2 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 300 |
FP100S |
10000 V rectifier stack 2.2 A forward current, 3000 ns recovery time |
Voltage Multipliers |
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